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93LC46CXT-I/STG PDF预览

93LC46CXT-I/STG

更新时间: 2024-02-04 00:10:33
品牌 Logo 应用领域
美国微芯 - MICROCHIP 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 388K
描述
1K Microwire Compatible Serial EEPROM

93LC46CXT-I/STG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:9 weeks
风险等级:5.24Is Samacsys:N
其他特性:3 WIRE INTERFACE; AUTOMATIC WRITE; ERAL AT 4.5V TO 6.0V备用内存宽度:8
最大时钟频率 (fCLK):2 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:8
字数:64 words字数代码:64
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64X16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大待机电流:0.00003 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE
Base Number Matches:1

93LC46CXT-I/STG 数据手册

 浏览型号93LC46CXT-I/STG的Datasheet PDF文件第3页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第4页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第5页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第7页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第8页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第9页 
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C  
The DO pin indicates the READY/BUSY status of the  
2.4  
ERASE  
device if CS is brought high after a minimum of 250 ns  
low (TCSL). DO at logical ‘0’ indicates that programming  
is still in progress. DO at logical ‘1’ indicates that the  
register at the specified address has been erased and  
the device is ready for another instruction.  
The ERASE instruction forces all data bits of the  
specified address to the logical ‘1’ state. CS is brought  
low following the loading of the last address bit. This  
falling edge of the CS pin initiates the self-timed  
programming cycle, except on ‘93C’ devices where the  
rising edge of CLK before the last address bit initiates  
the write cycle.  
Note:  
Issuing a Start bit and then taking CS low  
will clear the READY/BUSY status from  
DO.  
FIGURE 2-1:  
ERASE TIMING FOR 93AA AND 93LC DEVICES  
TCSL  
CS  
CHECK STATUS  
CLK  
DI  
1
1
AN  
AN-1 AN-2  
A0  
•••  
1
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWC  
FIGURE 2-2:  
ERASE TIMING FOR 93C DEVICES  
TCSL  
CS  
CHECK STATUS  
CLK  
DI  
1
1
AN  
AN-1 AN-2  
A0  
•••  
1
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWC  
DS21749D-page 6  
2003 Microchip Technology Inc.  

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