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93C56A-I/OTG PDF预览

93C56A-I/OTG

更新时间: 2024-02-17 02:15:53
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 169K
描述
256 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6, LEAD FREE, PLASTIC, SC-74A, SOT-23, 6 PIN

93C56A-I/OTG 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SOIC-8针数:8
Reach Compliance Code:unknownFactory Lead Time:6 weeks
风险等级:5.65其他特性:10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
备用内存宽度:16最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256X8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified串行总线类型:MICROWIRE
最大待机电流:0.0001 A子类别:EEPROMs
最大压摆率:0.004 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最长写入周期时间 (tWC):1 ms写保护:SOFTWARE
Base Number Matches:1

93C56A-I/OTG 数据手册

 浏览型号93C56A-I/OTG的Datasheet PDF文件第2页浏览型号93C56A-I/OTG的Datasheet PDF文件第3页浏览型号93C56A-I/OTG的Datasheet PDF文件第4页浏览型号93C56A-I/OTG的Datasheet PDF文件第6页浏览型号93C56A-I/OTG的Datasheet PDF文件第7页浏览型号93C56A-I/OTG的Datasheet PDF文件第8页 
93C56A/B  
3.4  
ERASE  
3.5  
Erase All (ERAL)  
The ERASE instruction forces all data bits of the spec-  
ified address to the logical “1” state. This cycle begins  
on the rising clock edge of the last address bit.  
The ERAL instruction will erase the entire memory  
array to the logical “1” state.The ERAL cycle is identical  
to the ERASE cycle, except for the different opcode.  
The ERAL cycle is completely self-timed and com-  
mences at the rising clock edge of the last address bit.  
Clocking of the CLK pin is not necessary after the  
device has entered the ERAL cycle.  
The DO pin indicates the READY/BUSY status of the  
device if CS is brought high after a minimum of 250 ns  
low (TCSL). DO at logical “0” indicates that program-  
ming is still in progress. DO at logical “1” indicates that  
the register at the specified address has been erased  
and the device is ready for another instruction.  
The DO pin indicates the READY/BUSY status of the  
device, if CS is brought high after a minimum of 250 ns  
low (TCSL) and before the entire ERAL cycle is com-  
plete.  
FIGURE 3-2: ERASE TIMING  
TCSL  
CS  
CHECK STATUS  
CLK  
1
1
AN  
AN-1 AN-2  
A0  
•••  
DI  
1
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWC  
FIGURE 3-3: ERAL TIMING  
TCSL  
CS  
CHECK STATUS  
CLK  
1
0
0
1
0
X
X
DI  
•••  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TEC  
1998 Microchip Technology Inc.  
Preliminary  
DS21206B-page 5  

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