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93LC66AT-E/P PDF预览

93LC66AT-E/P

更新时间: 2024-11-19 05:06:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
28页 424K
描述
4K Microwire Compatible Serial EEPROM

93LC66AT-E/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:0.300 INCH, LEAD FREE, PLASTIC, MS-001, DIP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.24
Is Samacsys:N备用内存宽度:8
最大时钟频率 (fCLK):2 MHzJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.46 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:4.32 mm串行总线类型:MICROWIRE
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):6 msBase Number Matches:1

93LC66AT-E/P 数据手册

 浏览型号93LC66AT-E/P的Datasheet PDF文件第2页浏览型号93LC66AT-E/P的Datasheet PDF文件第3页浏览型号93LC66AT-E/P的Datasheet PDF文件第4页浏览型号93LC66AT-E/P的Datasheet PDF文件第5页浏览型号93LC66AT-E/P的Datasheet PDF文件第6页浏览型号93LC66AT-E/P的Datasheet PDF文件第7页 
93AA66A/B/C, 93LC66A/B/C,  
93C66A/B/C  
4K Microwire Compatible Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
ORG Pin  
Word Size  
Temp Ranges  
Packages  
93AA66A  
93AA66B  
93LC66A  
93LC66B  
93C66A  
1.8-5.5  
1.8-5-5  
2.5-5.5  
2.5-5.5  
4.5-5.5  
4.5-5.5  
1.8-5.5  
2.5-5.5  
4.5-5.5  
No  
No  
8-bit  
16-bit  
I
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, MC  
I
No  
8-bit  
I, E  
I, E  
I, E  
I, E  
I
No  
16-bit  
No  
8-bit  
93C66B  
No  
16-bit  
93AA66C  
93LC66C  
93C66C  
Yes  
Yes  
Yes  
8 or 16-bit  
8 or 16-bit  
8 or 16-bit  
I, E  
I, E  
P, SN, ST, MS, MC  
P, SN, ST, MS, MC  
Features:  
Description:  
• Low-power CMOS technology  
The Microchip Technology Inc. 93XX66A/B/C devices  
are 4K bit low-voltage serial Electrically Erasable  
PROMs (EEPROM). Word-selectable devices such as  
the 93AA66C, 93LC66C or 93C66C are dependent  
upon external logic levels driving the ORG pin to set  
word size. For dedicated 8-bit communication, the  
93XX66A devices are available, while the 93XX66B  
devices provide dedicated 16-bit communication.  
Advanced CMOS technology makes these devices  
ideal for low-power, nonvolatile memory applications.  
The entire 93XX Series is available in standard  
packages including 8-lead PDIP and SOIC, and  
advanced packaging including 8-lead MSOP, 6-lead  
SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. Pb-free  
(Pure Matte Sn) finish is available.  
• ORG pin to select word size for ‘66C’ version  
• 512 x 8-bit organization ‘A’ ver. devices (no ORG)  
• 256 x 16-bit organization ‘B’ ver. devices (no  
ORG)  
• Self-timed erase/write cycles (including  
auto-erase)  
• Automatic ERAL before WRAL  
• Power-on/off data protection circuitry  
• Industry standard 3-wire serial I/O  
• Device Status signal (Ready/Busy)  
• Sequential read function  
• 1,000,000 E/W cycles  
• Data retention > 200 years  
Temperature ranges supported:  
- Industrial (I)  
-40°C to +85°C  
-40°C to +125°C  
- Automotive (E)  
Pin Function Table  
Name  
Function  
CS  
Chip Select  
CLK  
DI  
Serial Data Clock  
Serial Data Input  
Serial Data Output  
Ground  
DO  
VSS  
NC  
No internal connection  
Memory Configuration  
Power Supply  
ORG  
VCC  
© 2005 Microchip Technology Inc.  
DS21795C-page 1  

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