Datasheet > 935317972515

935317972515

更新时间： 2024-01-01 19:12:40

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
28页	1116K
描述
RF Power Field-Effect Transistor

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935317972515 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

935317972515 数据手册

Document Number: AFT27S010N

Rev. 3, 12/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 1.26 W RF power LDMOS transistor is designed for cellular base

station applications covering the frequency range of 728 to 3600 MHz.

AFT27S010NT1



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

_DQ= 90 mA, P_out= 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.⁽¹⁾

2100 MHz

728–3600 MHz, 1.26 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

(dB)



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2110 MHz

2140 MHz

2170 MHz

(%)

23.2

23.0

22.6

21.6

21.8

21.7

9.1

9.0

8.7

--42.0

--41.5

--41.7

-- 11

-- 1 5

2300 MHz



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2300 MHz

2350 MHz

2400 MHz

(dB)

21.2

21.6

20.7

(%)

23.6

22.6

21.0

PLD--1.5W

PLASTIC

9.0

8.6

8.3

--40.9

--40.0

--40.1

-- 1 0

-- 2 2

-- 9

2600 MHz



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

RF /V

in GS

Frequency

2500 MHz

2600 MHz

2700 MHz

(dB)

19.6

21.0

19.6

(%)

22.0

22.7

21.2

RF /V

out DS

9.8

9.4

8.9

--44.8

--41.4

--39.7

-- 7

-- 1 5

-- 5

(Top View)

Note: The center pad on the backside of the

package is the source terminal for the

transistor.



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ= 80 mA, P_out= 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.⁽¹⁾

700 MHz

Figure 1. Pin Connections



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

728 MHz

748 MHz

768 MHz

(dB)

24.3

(%)

25.5

24.7

23.8

9.3

9.4

9.5

--44.0

--43.9

--43.6

-- 1 2

3500 MHz



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

3400 MHz

3500 MHz

3600 MHz

(dB)

14.7

16.0

15.0

(%)

15.8

16.8

17.4

9.0

8.6

--44.9

--44.2

-- 7

-- 8

-- 4

1. All data measured in fixture with device soldered to heatsink.

Features



Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

Universal Broadband Driven Device with Internal RF Feedback

AFT27S010NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...28

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