Datasheet > 935278996132

935278996132

更新时间： 2024-11-12 04:26:59

品牌	Logo	应用领域
恩智浦 - NXP		输入元件光电二极管逻辑集成电路
页数	文件大小	规格书
20页	271K
描述
AUP/ULP/V SERIES, 2-INPUT NAND GATE, PDSO6, 1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, SON-6

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935278996132 数据手册

74AUP1G00

Low-power 2-input NAND gate

Rev. 5 — 16 March 2012

Product data sheet

1. General description

The 74AUP1G00 provides the single 2-input NAND function.

Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall

times across the entire V_CCrange from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire

V_CCrange from 0.8 V to 3.6 V.

This device is fully specified for partial Power-down applications using I_OFF

The I_OFFcircuitry disables the output, preventing the damaging backflow current through

the device when it is powered down.

2. Features and benefits

 Wide supply voltage range from 0.8 V to 3.6 V

 High noise immunity

 Complies with JEDEC standards:

 JESD8-12 (0.8 V to 1.3 V)

 JESD8-11 (0.9 V to 1.65 V)

 JESD8-7 (1.2 V to 1.95 V)

 JESD8-5 (1.8 V to 2.7 V)

 JESD8-B (2.7 V to 3.6 V)

 ESD protection:

 HBM JESD22-A114F Class 3A. Exceeds 5000 V

 MM JESD22-A115-A exceeds 200 V

 CDM JESD22-C101E exceeds 1000 V

 Low static power consumption; I_CC= 0.9 A (maximum)

 Latch-up performance exceeds 100 mA per JESD 78 Class II

 Inputs accept voltages up to 3.6 V

 Low noise overshoot and undershoot < 10 % of V_CC

 I_OFFcircuitry provides partial Power-down mode operation

 Multiple package options

 Specified from 40 C to +85 C and 40 C to +125 C

12 3 4 5 6 7...20

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