Datasheet > 934060017115

934060017115

更新时间： 2024-11-22 08:54:59

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
15页	189K
描述
1000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN

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934060017115 数据手册

PBSS305PD

100 V, 2 A PNP low V_CEsat(BISS) transistor

Rev. 02 — 8 December 2009

Product data sheet

1. Product profile

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS305ND.

1.2 Features

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

High-voltage DC-to-DC conversion

High-voltage MOSFET gate driving

High-voltage motor control

High-voltage power switches (e.g. motors, fans)

Thin Film Transistor (TFT) backlight inverter

Automotive applications

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

−100

−2

Unit

V_CEO

I_C

collector-emitter voltage open base

collector current

[1]

[2]

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

−3

R_CEsat

collector-emitter

I_C= −2 A;

125

mΩ

saturation resistance

I_B= −200 mA

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

[2] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

12 3 4 5 6 7...15

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