Datasheet > 934061273518

934061273518

更新时间： 2024-11-11 21:21:35

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲光电二极管晶体管
页数	文件大小	规格书
13页	163K
描述
14.9A, 30V, 0.019ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8

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934061273518 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.76	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	14.9 A
最大漏源导通电阻：	0.019 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MS-012AA	JESD-30 代码：	R-PDSO-G8
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	28.8 A
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

934061273518 数据手册

PMK30EP

P-channel TrenchMOS extremely low level FET

Rev. 04 — 25 October 2010

Product data sheet

1. Product profile

1.1 General description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

1.3 Applications

Battery management

Load switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

-30

I_D

T_sp= 25 °C; V_GS= -10 V;

see Figure 1; see Figure 3

-14.

P_tot

total power dissipation T_sp= 25 °C; see Figure 2

6.9

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= -10 V; I_D= -9.2 A;

T_j= 25 °C; see Figure 9

mΩ

V_GS= -10 V; I_D= -9.2 A;

V_DS= -15 V; T_j= 25 °C;

see Figure 11; see Figure 12

12 3 4 5 6 7...13

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