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934058425118 PDF预览

934058425118

更新时间: 2024-11-25 19:54:47
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
13页 83K
描述
934058425118

934058425118 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
雪崩能效等级(Eas):560 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.005 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934058425118 数据手册

 浏览型号934058425118的Datasheet PDF文件第2页浏览型号934058425118的Datasheet PDF文件第3页浏览型号934058425118的Datasheet PDF文件第4页浏览型号934058425118的Datasheet PDF文件第5页浏览型号934058425118的Datasheet PDF文件第6页浏览型号934058425118的Datasheet PDF文件第7页 
PHP/B152NQ03LTA  
N-channel TrenchMOS™ logic level FET  
Rev. 01 — 05 March 2004  
Product data  
1. Product profile  
1.1 Description  
Logic level N-channel enhancement mode field-effect transistor in a plastic package  
using TrenchMOS™ technology.  
1.2 Features  
Logic level threshold  
Low gate charge  
Low on-state resistance  
Low thermal resistance.  
1.3 Applications  
DC-to-DC converters  
Switched-mode power supplies.  
1.4 Quick reference data  
VDS 25 V  
Ptot 150 W  
ID 75 A  
RDSon 4 m.  
2. Pinning information  
Table 1:  
Pin Description  
Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outlines and symbol  
Simplified outline  
Symbol  
1
2
3
gate (g)  
d
s
mb  
mb  
[1]  
drain (d)  
source (s)  
g
mb mounting base;  
connected to drain (d)  
MBB076  
2
1
3
MBK116  
MBK106  
1
2 3  
SOT404 (D2-PAK)  
SOT78 (TO-220AB)  
[1] It is not possible to make connection to pin 2 of the SOT404 package.  

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