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934057988215 PDF预览

934057988215

更新时间: 2024-11-25 19:35:43
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
11页 198K
描述
1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3

934057988215 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.8最大集电极电流 (IC):1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):210JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

934057988215 数据手册

 浏览型号934057988215的Datasheet PDF文件第2页浏览型号934057988215的Datasheet PDF文件第3页浏览型号934057988215的Datasheet PDF文件第4页浏览型号934057988215的Datasheet PDF文件第5页浏览型号934057988215的Datasheet PDF文件第6页浏览型号934057988215的Datasheet PDF文件第7页 
3
2
T
O
S
PBSS5130T  
30 V; 1 A PNP low VCEsat (BISS) transistor  
9 July 2013  
Product data sheet  
1. General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23  
Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Small SMD plastic package  
Low collector-emitter saturation voltage VCEsat  
High collector current capability: IC and ICM  
Higher efficiency due to less heat generation  
AEC-Q101 qualified  
3. Applications  
DC-to-DC conversion  
Supply line switching  
Battery charger  
LCD backlighting  
Driver in low supply voltage applications (e.g. lamps and LEDs)  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-30  
V
IC  
collector current  
-
-
-
-
-
-
-1  
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-3  
A
RCEsat  
collector-emitter  
IC = -500 mA; IB = -50 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C  
220  
mΩ  
saturation resistance  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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