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934057744315 PDF预览

934057744315

更新时间: 2024-11-21 18:33:23
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
13页 253K
描述
1220mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1 X 0.60 MM, 0.50 MM HEIGHT, PLASTIC, ULTRA SMALL, LEADLESS, SC-101, 3 PIN

934057744315 技术参数

生命周期:Transferred包装说明:CHIP CARRIER, R-PBCC-N3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):1.22 A最大漏源导通电阻:0.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

934057744315 数据手册

 浏览型号934057744315的Datasheet PDF文件第2页浏览型号934057744315的Datasheet PDF文件第3页浏览型号934057744315的Datasheet PDF文件第4页浏览型号934057744315的Datasheet PDF文件第5页浏览型号934057744315的Datasheet PDF文件第6页浏览型号934057744315的Datasheet PDF文件第7页 
PMZ760SN  
N-channel TrenchMOS standard level FET  
Rev. 02 — 12 July 2007  
Product data sheet  
BOTTOM VIEW  
1. Product profile  
1.1 General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using  
TrenchMOS technology.  
1.2 Features  
I Profile 55 % lower than SOT23  
I Footprint 90 % smaller than SOT23  
I Fast switching  
I Low on-state resistance  
I Leadless package  
I Standard level compatible threshold  
1.3 Applications  
I Driver circuits  
I Load switching in portable appliances  
1.4 Quick reference data  
I VDS 60 V  
I ID 1.22 A  
I RDSon 900 mΩ  
I Ptot 2.50 W  
2. Pinning information  
Table 1.  
Pinning  
Pin  
1
Description  
gate (G)  
Simplified outline  
Symbol  
D
1
2
2
source (S)  
drain (D)  
3
3
G
Transparent  
top view  
mbb076  
S
SOT883 (SC-101)  

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