5秒后页面跳转
934056599118 PDF预览

934056599118

更新时间: 2024-11-21 20:02:07
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
9页 96K
描述
TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power

934056599118 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.17
雪崩能效等级(Eas):300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):39 A最大漏源导通电阻:0.057 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):156 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934056599118 数据手册

 浏览型号934056599118的Datasheet PDF文件第2页浏览型号934056599118的Datasheet PDF文件第3页浏览型号934056599118的Datasheet PDF文件第4页浏览型号934056599118的Datasheet PDF文件第5页浏览型号934056599118的Datasheet PDF文件第6页浏览型号934056599118的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
PSMN057-200B  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
VDSS = 200 V  
ID = 39 A  
• Low thermal resistance  
g
RDS(ON) 57 mΩ  
s
GENERAL DESCRIPTION  
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in  
each package at each voltage rating.  
Applications:-  
• d.c. to d.c. converters  
• switched mode power supplies  
The PSMN057-200B is supplied in the SOT404 (D2PAK) surface mounted package.  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
mb  
gate  
2
drain  
(no connection possible)  
g
2
3
source  
s
1
3
mb drain  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
200  
200  
± 20  
39  
27.5  
156  
250  
175  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
- 55  
December 2000  
1
Rev 1.000  

与934056599118相关器件

型号 品牌 获取价格 描述 数据表
934056605215 NXP

获取价格

TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, 3 PIN
934056607215 NXP

获取价格

TRANSISTOR 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, 3 PIN
934056609116 NXP

获取价格

800V, 1A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92, PLASTIC, SPT, SC-43, 3 PIN
934056610115 NXP

获取价格

Rectifier Diode, 4 Element, 0.2A, 85V V(RRM), Silicon
934056610135 NXP

获取价格

DIODE 0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, UMT6, SC-88, 6 PIN, Sig
934056619115 NXP

获取价格

DIODE 70 V, SILICON, PIN DIODE, PLASTIC, SMD, UFP, SC-79, 2 PIN, PIN Diode
934056633215 NXP

获取价格

1700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SMD, SST3, 3 PIN
934056645118 NXP

获取价格

73A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3
934056646127 NXP

获取价格

暂无描述
934056667116 NXP

获取价格

400V, 0.6A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92, PLASTIC, SPT, SC-43, 3 PIN