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934056633215 PDF预览

934056633215

更新时间: 2024-11-21 14:47:23
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
12页 253K
描述
1700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SMD, SST3, 3 PIN

934056633215 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:PLASTIC, SMD, SST3, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.11Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):1.7 A最大漏源导通电阻:0.19 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):56 pF
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:PURE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

934056633215 数据手册

 浏览型号934056633215的Datasheet PDF文件第2页浏览型号934056633215的Datasheet PDF文件第3页浏览型号934056633215的Datasheet PDF文件第4页浏览型号934056633215的Datasheet PDF文件第5页浏览型号934056633215的Datasheet PDF文件第6页浏览型号934056633215的Datasheet PDF文件第7页 
SI2304DS  
N-channel enhancement mode field-effect transistor  
Rev. 01 — 17 August 2001  
Product data  
M3D088  
1. Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™1 technology  
Product availability:  
SI2304DS in SOT23.  
2. Features  
TrenchMOS™ technology  
Very fast switching  
Subminiature surface mount package.  
3. Applications  
Battery management  
High speed switch  
Low power DC to DC converter.  
4. Pinning information  
Table 1:  
Pinning - SOT23, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
3
d
s
2
source (s)  
drain (d)  
3
g
1
2
MBB076  
Top view  
MSB003  
SOT23  
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.  

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