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934039630127

更新时间： 2024-11-16 19:52:39
品牌 Logo 应用领域
恩智浦 - NXP 局域网三端双向交流开关
页数 文件大小 规格书
6页 46K
描述
600V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, PLASTIC, TO-220F, 3 PIN

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934039630127 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
HTS代码：8541.30.00.80风险等级：5.11
其他特性：SENSITIVE GATE外壳连接：ISOLATED
配置：SINGLEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：8 A断态重复峰值电压：600 V
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

934039630127 数据手册

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Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT137X-600D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated, sensitive gate triac in a full  
pack plastic envelope, intended for use  
in general purpose bidirectional  
SYMBOL  
PARAMETER  
MAX. UNIT  
switching  
and  
phase  
control  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state voltages  
RMS on-state current  
Non-repetitive peak on-state current  
600  
8
V
A
A
applications. This device is intended to  
beinterfaced directlytomicrocontrollers,  
logic integrated circuits and other low  
power gate trigger circuits.  
65  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
6001  
8
UNIT  
V
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Ths ≤ 73 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
A
t = 20 ms  
-
-
-
65  
71  
21  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
June 2001  
1
Rev 1.000  
123456

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