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934039920127

更新时间: 2024-11-16 15:31:51
品牌 Logo 应用领域
恩智浦 - NXP 局域网三端双向交流开关
页数 文件大小 规格书
7页 50K
描述
800V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, PLASTIC, TO-220F, 3 PIN

934039920127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.16
外壳连接:ISOLATED配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:12 A
断态重复峰值电压:800 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

934039920127 数据手册

 浏览型号934039920127的Datasheet PDF文件第2页浏览型号934039920127的Datasheet PDF文件第3页浏览型号934039920127的Datasheet PDF文件第4页浏览型号934039920127的Datasheet PDF文件第5页浏览型号934039920127的Datasheet PDF文件第6页浏览型号934039920127的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Triacs  
BT138X series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated triacs in a full pack plastic  
envelope, intended for use in  
applications requiring high bidirectional  
transient and blocking voltage capability  
and high thermal cycling performance.  
Typical applications include motor  
control, industrial and domestic lighting,  
heating and static switching.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BT138X-  
600  
800  
BT138X- 600F 800F  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
800  
V
IT(RMS)  
ITSM  
12  
95  
12  
95  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Ths 56 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
12  
A
t = 20 ms  
-
-
-
95  
105  
45  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
July 2001  
1
Rev 1.400  

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