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934033450115 PDF预览

934033450115

更新时间: 2024-09-28 15:31:35
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 114K
描述
TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

934033450115 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:PLASTIC, SMD, SC-73, 4 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.09
其他特性:FAST SWITCHING外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):3 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

934033450115 数据手册

 浏览型号934033450115的Datasheet PDF文件第2页浏览型号934033450115的Datasheet PDF文件第3页浏览型号934033450115的Datasheet PDF文件第4页浏览型号934033450115的Datasheet PDF文件第5页浏览型号934033450115的Datasheet PDF文件第6页浏览型号934033450115的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BSP250  
P-channel enhancement mode  
vertical D-MOS transistor  
1997 Jun 20  
Product specification  
Supersedes data of November 1994  
File under Discrete Semiconductors, SC13b  

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