是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.12 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
933495380215 | NXP |
获取价格 |
TRANSISTOR 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SST3, SMD, 3 PIN, BIP | |
933498190113 | NXP |
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1A, 50V, SILICON, SIGNAL DIODE | |
933498190133 | NXP |
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1A, 50V, SILICON, SIGNAL DIODE | |
933498200113 | NXP |
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DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode | |
933498200133 | NXP |
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DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode | |
933498210113 | NXP |
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1A, 200V, SILICON, SIGNAL DIODE | |
933498210133 | NXP |
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1A, 200V, SILICON, SIGNAL DIODE | |
933498220113 | NXP |
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1A, 400V, SILICON, SIGNAL DIODE | |
933498220133 | NXP |
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1A, 400V, SILICON, SIGNAL DIODE | |
933498230113 | NXP |
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1A, 600V, SILICON, SIGNAL DIODE |