Datasheet > 91034

91034

更新时间： 2024-11-24 12:52:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	207K
描述
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedlzed device design, low on-resistance and cost-effectiveness

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91034 数据手册

IRF634, SiHF634

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

250

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)()

V_GS= 10 V

0.45

RoHS*

Q_g(Max.) (nC)

6.5

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRF634PbF

SiHF634-E3

IRF634

Lead (Pb)-free

SnPb

SiHF634

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

_C= 25 °C

8.1

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

5.1

Pulsed Drain Current^a

I_DM

0.59

300

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

8.1

E_AR

7.4

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 7.3 mH, R_g= 25 , I_AS= 8.1 A (see fig. 12).

c. I_SD 8.1 A, dI/dt  120 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91034

S11-0509-B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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