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9014C

更新时间: 2024-11-11 20:48:59
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
2页 102K
描述
Transistor

9014C 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.57
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):200最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.45 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):150 MHzBase Number Matches:1

9014C 数据手册

 浏览型号9014C的Datasheet PDF文件第2页 
UTC 9014  
NPN EPITAXIAL SILICON TRANSISTOR  
PRE-AMPLIFIER, LOW LEVEL &  
LOW NOISE  
FEATURES  
*High total power dissipation. (450mW)  
*Excellent hFE linearity.  
*Complementary to UTC 9015  
1
TO-92  
1: EMITTER 2: BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
RATING  
UNIT  
V
V
50  
45  
5
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
100  
mA  
mW  
°C  
Collector dissipation  
Junction Temperature  
Storage Temperature  
Pc  
Tj  
TSTG  
450  
150  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=100µA, IE=0  
MIN TYP MAX UNIT  
50  
45  
5
V
V
V
nA  
nA  
Ic=1mA, IB=0  
IE=100µA, Ic=0  
VCB=50V, IE=0  
VEB=5V, IC=0  
50  
100  
1000  
0.3  
Emitter cutoff current  
IEBO  
DC current gain  
hFE  
VCE=5V,Ic=1mA  
Ic=100mA, IB=5mA  
Ic=100mA, IB=5mA  
VCE=5V, Ic=2mA  
VCB=10V, IE=0, f=1MHz  
VCE=5V, Ic=10mA  
VCE=5V, Ic=0.2mA  
f=1KHz, Rs=2KΩ  
60  
280  
0.14  
0.84  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
Output Capacitance  
Current gain-Bandwidth Porduct  
Noise Figure  
VCE(sat)  
VBE(sat)  
VBE(on)  
Cob  
fT  
NF  
V
V
1.0  
0.58 0.63  
2.2  
0.7  
3.5  
V
pF  
MHz  
dB  
150  
270  
0.9  
10  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R201-031,A  

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