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80CNQ035APBF PDF预览

80CNQ035APBF

更新时间: 2024-11-24 04:01:31
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管局域网
页数 文件大小 规格书
7页 176K
描述
SCHOTTKY RECTIFIER New GenIII D-61 Package

80CNQ035APBF 数据手册

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Bulletin PD-21002 01/05  
80CNQ...APbF  
80CNQ...ASMPbF  
80 Amp  
SCHOTTKY RECTIFIER  
New GenIII D-61 Package  
Description/ Features  
Major Ratings and Characteristics  
The center tap Schottky rectifier module series has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for reli-  
able operation up to 150° C junction temperature. Typical  
applications are in switching power supplies, converters,  
free-wheeling diodes, and reverse battery protection.  
Characteristics  
Values  
Units  
I
Rectangular  
waveform  
80  
A
F(AV)  
V
I
range  
35 to 45  
5800  
V
A
V
150° C T operation  
Center tap module  
Very low forward voltage drop  
RRM  
J
@tp=5µssine  
FSM  
High purity, high temperature epoxy encapsulation for  
V
@40Apk,T =125°C  
J
(per leg)  
0.47  
enhanced mechanical strength and moisture resistance  
F
High frequency operation  
Guard ring for enhanced ruggedness and long term  
T
range  
-55to150  
°C  
J
reliability  
New fully transfer-mould low profile, small  
footprint, high current package  
Through-hole versions are currently available for use in  
Lead-Free applications ("PbF" suffix)  
Case Styles  
80CNQ...APbF  
80CNQ...ASMPbF  
D61-8  
D61-8-SM  
www.irf.com  
1

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 35V V(RRM), Silicon