Datasheet > 80-M3122PA400SC-K830F4

80-M3122PA400SC-K830F4

更新时间： 2024-10-29 11:14:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	2734K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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80-M3122PA400SC-K830F4 数据手册

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80-M3122PA400SC-K830F40

datasheet

Half-Bridge Switch - Lo side / Half-Bridge Switch - Hi side

Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I _C= f(V_CE

)

I _C= f(V_CE)

1200

V_GE

7 V

8 V

9 V

10V

11V

12V

13V

14V

15V

16V

17V

900

600

300

600

300

V_{C E}(V)

t_p

250

μs

25 °C

125 °C

150 °C

t_p

T_j

250

125

7 V to 17 V in steps of 1 V

μs

V_GE

T_j:

°C

V_GEfrom

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as function of pulse duration

I _C= f(V_GE

)

Z _th(j-s)= f(t_p)

10^-1

400

300

10^-2

200

100

0,5

0,2

0,1

0,05

0,02

0,01

0,005

10^-3

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t_p(s)

10²

V_GE(V)

t_p

100

μs

25 °C

125 °C

150 °C

D =

R _th(j-s)

t_p/ T

V_CE

T_j:

0,09

K/W

IGBT thermal model values

(K/W)

(s)

2,36E-02

1,71E-02

3,28E-02

5,52E-03

3,89E-03

2,94E-03

1,19E+00

1,56E-01

3,48E-02

4,93E-03

6,63E-04

1,71E-04

08 Mar. 2019 / Revision 3

1 2 3 456 7 8...17

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