7MBR100VZ120-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
Zero gate voltage collector current
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
-
-
1.0
mA
nA
V
Gate-Emitter leakage current
Gate-Emitter threshold voltage
GE = 0V, VGE = ±20V
-
200
VGE (th)
CE = 20V, I
C
= 100mA
6.0
-
6.5
7.0
Tj=25°C
2.25
2.55
2.60
1.75
2.05
2.10
9.1
2.70
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
Tj=25°C
-
-
(terminal)
I
C
= 100A
-
-
Collector-Emitter saturation voltage
V
-
2.20
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
-
-
(chip)
I
C
= 100A
-
-
-
Input capacitance
Turn-on time
Cies
ton
tr
VCE = 10V, VGE = 0V, f = 1MHz
-
nF
µs
-
0.39
0.09
0.03
0.53
0.06
2.20
2.35
2.30
1.70
1.85
1.80
-
1.20
0.60
-
VCC = 600V
-
I
C
= 100A
tr (i)
toff
tf
-
VGE = +15 / -15V
-
1.00
0.30
2.65
-
RG = 1.6Ω
Turn-off time
-
Tj=25°C
-
VF
I
F
= 100A
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
-
-
Forward on voltage
V
-
2.15
-
VF
(chip)
I
I
F
F
= 100A
= 100A
Tj=125°C
Tj=150°C
-
-
-
Reverse recovery time
trr
-
0.1
µs
V
GE = 0V
Zero gate voltage collector current
I
I
CES
GES
-
-
-
-
1.0
mA
VCE = 1200V
VCE = 0V
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
200
nA
V
VGE = +20 / -20V
Tj=25°C
-
2.25
2.60
2.65
1.85
2.20
2.25
0.39
0.09
0.53
0.06
-
2.70
-
V
CE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
I
C
= 75A
-
-
-
2.30
-
V
(chip)
CE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
-
I
C
= 75A
-
-
ton
tr
-
1.20
0.60
1.00
0.30
1.00
2.35
-
VCE = 600V
-
I
C
= 75A
µs
VGE = +15 / -15V
toff
tf
-
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
R
G
= 2.2Ω
-
IRRM
VR
= 1200V
-
mA
V
terminal
chip
-
2.00
1.50
-
V
(chip)
FM
I
F
= 100A
= 1600V
-
-
IRRM
VR
1.0
-
mA
Ω
T = 25°C
-
5000
495
3375
R
B
T = 100°C
T = 25 / 50°C
465
3305
520
3450
B value
K
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
Inverter IGBT
-
-
-
-
-
-
0.29
0.44
0.39
0.43
-
Inverter FWD
Rth(j-c)
-
Thermal resistance (1device)
Brake IGBT
-
-
°C/W
Converter Diode
Contact thermal resistance (1device) (*4)
Rth(c-f)
with Thermal Compound
0.05
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2