Datasheet > 7MBP200VEA060-50

7MBP200VEA060-50

更新时间： 2022-05-14 14:56:17

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
11页	804K
描述
IGBT MODULE (V series) 600V / 200A / IPM

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7MBP200VEA060-50 数据手册

7MBP200VEA060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Brake

Collector current vs. Collector-Emitter voltage

=25 [Chip] (typ.)

Collector current vs. Collector-Emitter voltage

℃

T =25℃ [Terminal] (typ.)

200

150

100

200

150

100

^CC=15V

CC =15V

^CC=13V

CC =13V

VCC =17V

^CC=17V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Collector-Emitter voltage : V^CE[ V ]

Collector current vs. Collector-Emitter voltage

=125 [Chip] (typ.)

Collector current vs. Collector-Emitter voltage

℃

=125

℃ [Terminal] (typ.)

200

150

100

200

150

100

CC =15V

V^CC=13V

CC =15V

^CC=17V

V^CC=13V

^CC=17V

0.5

1.0

1.5

2.0

2.5

3.0

0.5

1.0

1.5

2.0

2.5

3.0

Collector-Emitter voltage : V^CE[ V ]

Forward current vs. Forward voltage

[Chip] (typ.)

Forward current vs. Forward voltage

[Terminal] (typ.)

200

150

100

200

150

100

=125

℃

T =125℃

T =25℃

0.5

1.0

1.5

2.0

2.5

[ V ]

3.0

0.5

1.0

1.5

2.0

2.5

[ V ]

3.0

Forward voltage : V

1...5 6 789 10 11

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