7MBP200RA060
IGBT-IPM R series
600V / 200A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Rating
Unit
Item
Min.
Max.
V
DC bus voltage
VDC
VDC(surge)
VSC
VCES
VR
0
450
500
400
600
600
200
400
200
735
75
V
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
0
V
200
V
0
V
-
A
INV Collector current
DC
IC
-
A
1ms
ICP
-
A
Duty=57.8% -IC
-
W
A
Collector power dissipation One transistor
PC
-
DB Collector current
DC
IC
-
A
1ms
ICP
-
150
75
A
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
IF
-
W
°C
V
PC
-
320
150
20
Tj
-
0
Input voltage of power supply for Pre-Driver
Input signal voltage
VCC*1
Vin *2
Iin
V
0
Vz
mA
V
Input signal current
-
1
Alarm signal voltage
VALM*3
IALM *4
Tstg
Top
0
Vcc
15
mA
°C
°C
kV
N·m
N·m
Alarm signal current
-
Fig.1 Measurement of case temperature
Storage temperature
-40
-20
-
125
100
AC2.5
3.5 *6
3.5 *6
Operating case temperature
Isolating voltage (Case-Terminal)
Viso *5
Screw torque
Mounting (M5)
Terminal (M5)
-
-
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
Symbol
Condtion
Min.
Typ.
Max.
1.0
2.8
3.0
1.0
2.8
3.3
Unit
mA
V
VCE=600V input terminal open
–
–
–
–
–
–
–
–
–
–
–
–
INV
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
Ic=200A
VCE(sat)
VF
-Ic=200A
V
VCE=600V input terminal open
mA
V
DB
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
ICES
Ic=75A
VCE(sat)
VF
-Ic=75A
V