IGBT IPM
600V
6×200A+Chopper
7MBP 200RA-060
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
n Outline Drawing
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min.
0
0
200
0
Max.
450
500
400
600
200
400
200
735
75
DC Bus Voltage
DC Bus Voltage (surge)
VDC
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
VIN
V
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Dynamic Brake
Collector Current
Forward Current of Diode
Collector Power Dissi. DB
Continuous
1ms
Duty=58.8%
One Transistor
A
W
A
Continuous
1ms
150
75
320
20
One Transistor
W
V
Voltage of Power Supply for Driver
Input Signal Voltage
0
0
VZ
Input Signal Current
IIN
VALM
IALM
Tj
TOP
Tstg
1
VCC
15
150
100
125
mA
V
mA
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
0
-20
-40
°C
Isolation Voltage
A.C. 1min.
Viso
Mounting *1
Terminals *1
2500
3.5
3.5
V
Screw Torque
Nm
Note: *1: Recommendable Value; 2.5 ~ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
VCE=600V, Input Terminal Open
IC=200A
Min.
Typ.
Max.
1.0
2.8
3.0
1.0
2.8
3.3
Units
mA
V
V
mA
V
Collector Current At Off Signal Input
INV Collector-Emitter Saturation Voltage
Forward Voltage of FWD
ICES
VCE(Sat)
VF
-IC=200A
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
ICES
VCE(Sat)
VF
VCE=600V, Input Terminal Open
IC=75A
-IC=75A
DB
V
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Min.
6
24
1.00
1.70
Typ.
Max.
32
114
1.70
2.40
Units
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
ICCP
ICCN
mA
1.35
2.05
8.0
VIN(th)
Input Signal Threshold Voltage
Off
V
Input Zener Voltage
VZ
RIN=20kW
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
DB Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
tALM
RALM
VUV
VH
VDC=0V, IC=0A, Case Temp.
110
150
125
20
20
°C
A
Surface of IGBT Chip
Tj=125°C
Tj=125°C
Tj=25°C
300
113
10
2
1500
µs
ms
W
1.5
1425
11.0
0.2
1575
12.5
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
tON
IC=200A, VDC=300V
0.3
Switching Time
tOFF
tRR
3.6
0.4
µs
IF=200A, VDC=300V
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