5秒后页面跳转
74HCT14DTR2G PDF预览

74HCT14DTR2G

更新时间: 2024-02-03 20:48:37
品牌 Logo 应用领域
安森美 - ONSEMI 触发器逻辑集成电路光电二极管
页数 文件大小 规格书
8页 125K
描述
Hex Schmitt−Trigger Inverter with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS

74HCT14DTR2G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP, TSSOP14,.25
针数:14Reach Compliance Code:unknown
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:7.03系列:HCT
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm负载电容(CL):50 pF
逻辑集成电路类型:INVERTER最大I(ol):0.004 A
湿度敏感等级:1功能数量:6
输入次数:1端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5 V
Prop。Delay @ Nom-Sup:4.8 ns传播延迟(tpd):48 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:1.2 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm

74HCT14DTR2G 数据手册

 浏览型号74HCT14DTR2G的Datasheet PDF文件第1页浏览型号74HCT14DTR2G的Datasheet PDF文件第2页浏览型号74HCT14DTR2G的Datasheet PDF文件第3页浏览型号74HCT14DTR2G的Datasheet PDF文件第5页浏览型号74HCT14DTR2G的Datasheet PDF文件第6页浏览型号74HCT14DTR2G的Datasheet PDF文件第7页 
74HCT14  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Temperature Limit  
V
*55_C to 25_C  
v85_C  
v125_C  
CC  
Symbol  
Parameter  
Test Conditions  
(V)  
Min  
Max  
Min  
Max  
Min  
Max Unit  
V
max Maximum PositiveGoing  
V
out  
= 0.1 V or V – 0.1 V  
4.5  
5.5  
1.9  
2.1  
1.9  
2.1  
1.9  
2.1  
V
)
T
O
CC  
Input Threshold Voltage  
|I | v 20 mA  
V
V
min  
Minimum PositiveGoing  
V
out  
= 0.1 V or V – 0.1 V  
4.5  
5.5  
1.2  
1.4  
1.2  
1.4  
1.2  
1.4  
V
)
T
O
CC  
Input Threshold Voltage  
|I | v 20 mA  
max Maximum NegativeGoing  
V
= 0.1 V or V – 0.1 V  
4.5  
5.5  
1.2  
1.4  
1.2  
1.4  
1.2  
1.4  
*
T
O
CC  
Input Threshold Voltage  
|I | v 20 mA  
out  
V
min  
*
T
Minimum NegativeGoing  
Input Threshold Voltage  
V
out  
= 0.1 V or V – 0.1 V  
4.5  
5.5  
0.5  
0.6  
0.5  
0.6  
0.5  
0.6  
O
CC  
|I | v 20 mA  
V
max  
min  
Maximum Hysteresis  
Voltage  
V
out  
= 0.1 V or V – 0.1 V  
4.5  
5.5  
1.4  
1.5  
1.4  
1.5  
1.4  
1.5  
H
O
CC  
|I | v 20 mA  
V
Minimum Hysteresis  
Voltage  
V
= 0.1 V or V – 0.1 V  
4.5  
5.5  
0.4  
0.4  
0.4  
0.4  
0.4  
0 4  
H
O
CC  
|I | v 20 mA  
out  
V
Minimum HighLevel  
V < V min  
out  
4.5  
5.5  
4.4  
5.4  
4.4  
5.4  
4.4  
5.4  
V
V
*
OH  
I
T
Output Voltage  
|I | v 20 mA  
V < V min  
4.5  
3.98  
3.84  
3.7  
*
T
I
|I | v 4.0 mA  
out  
V
Maximum LowLevel  
Output Voltage  
V V max  
4.5  
5.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
)
T
OL  
I
|I | v 20 mA  
out  
V V max  
out  
4.5  
5.5  
5.5  
0.26  
$0.1  
2.0  
0.33  
$1.0  
20  
0.4  
)
I
T
|I | v 4.0 mA  
I
Maximum Input  
Leakage Current  
V = V or GND  
$1.0 mA  
IK  
I
CC  
I
Maximum Quiescent  
Supply Current  
(per package)  
V = V or GND  
40  
mA  
CC  
I
CC  
= 0 mA  
I
out  
w*55_C  
25_C to 125_C  
DI  
Additional Quiescent  
Supply Current  
V = 2.4 V, Any One Input  
5.5  
2.9  
2.4  
mA  
CC  
I
V = V or GND, Other Inputs  
I
CC  
= 0 mA  
l
out  
7. Information on typical parametric values can be found in the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).  
AC CHARACTERISTICS (C = 50 pF; Input t = t = 6.0 ns)  
L
r
f
Guaranteed Limit  
*55_C to 25_C  
v85_C  
v125_C  
Symbol  
Parameter  
Test Conditions  
Figures  
Min  
Max  
Min  
Max  
Min  
Max Unit  
t
t
,
Maximum Propagation  
Delay, Input A to Output  
Y (L to H)  
V
= 5.0 V $10%  
CC  
1 & 2  
32  
40  
19  
48  
22  
ns  
ns  
PLH  
PHL  
C = 50 pF, Input t = t = 6.0 ns  
L
r
f
t
t
,
Maximum Output  
Transition Time, Any  
Output  
V
= 5.0 V $10%  
1 & 2  
15  
TLH  
THL  
CC  
C = 50 pF, Input t = t = 6.0 ns  
L
r
f
8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor HighSpeed  
CMOS Data Book (DL129/D).  
Typical @ 25°C, V = 5.0 V  
CC  
C
PD  
Power Dissipation Capacitance, per Inverter (Note 9)  
32  
pF  
2
9. Used to determine the noload dynamic power consumption: P = C  
V
f + I  
V
. For load considerations, see the ON  
D
PD CC  
CC CC  
Semiconductor HighSpeed CMOS Data Book (DL129/D).  
http://onsemi.com  
4
 

与74HCT14DTR2G相关器件

型号 品牌 描述 获取价格 数据表
74HCT14N NXP Hex inverting Schmitt trigger

获取价格

74HCT14N/S71,112 NXP 74HCT14N

获取价格

74HCT14N-B PHILIPS Inverter, CMOS, PDIP14

获取价格

74HCT14PW NXP Hex inverting Schmitt trigger

获取价格

74HCT14PW NEXPERIA Hex inverting Schmitt triggerProduction

获取价格

74HCT14PW,118 NXP 74HC(T)14 - Hex inverting Schmitt trigger TSSOP 14-Pin

获取价格