74HCT14
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Temperature Limit
V
*55_C to 25_C
v85_C
v125_C
CC
Symbol
Parameter
Test Conditions
(V)
Min
Max
Min
Max
Min
Max Unit
V
max Maximum Positive−Going
V
out
= 0.1 V or V – 0.1 V
4.5
5.5
1.9
2.1
1.9
2.1
1.9
2.1
V
)
T
O
CC
Input Threshold Voltage
|I | v 20 mA
V
V
min
Minimum Positive−Going
V
out
= 0.1 V or V – 0.1 V
4.5
5.5
1.2
1.4
1.2
1.4
1.2
1.4
V
)
T
O
CC
Input Threshold Voltage
|I | v 20 mA
max Maximum Negative−Going
V
= 0.1 V or V – 0.1 V
4.5
5.5
1.2
1.4
1.2
1.4
1.2
1.4
*
T
O
CC
Input Threshold Voltage
|I | v 20 mA
out
V
min
*
T
Minimum Negative−Going
Input Threshold Voltage
V
out
= 0.1 V or V – 0.1 V
4.5
5.5
0.5
0.6
0.5
0.6
0.5
0.6
O
CC
|I | v 20 mA
V
max
min
Maximum Hysteresis
Voltage
V
out
= 0.1 V or V – 0.1 V
4.5
5.5
1.4
1.5
1.4
1.5
1.4
1.5
H
O
CC
|I | v 20 mA
V
Minimum Hysteresis
Voltage
V
= 0.1 V or V – 0.1 V
4.5
5.5
0.4
0.4
0.4
0.4
0.4
0 4
H
O
CC
|I | v 20 mA
out
V
Minimum High−Level
V < V min
out
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
V
*
OH
I
T
Output Voltage
|I | v 20 mA
V < V min
4.5
3.98
3.84
3.7
*
T
I
|I | v 4.0 mA
out
V
Maximum Low−Level
Output Voltage
V ≥ V max
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
)
T
OL
I
|I | v 20 mA
out
V ≥ V max
out
4.5
5.5
5.5
0.26
$0.1
2.0
0.33
$1.0
20
0.4
)
I
T
|I | v 4.0 mA
I
Maximum Input
Leakage Current
V = V or GND
$1.0 mA
IK
I
CC
I
Maximum Quiescent
Supply Current
(per package)
V = V or GND
40
mA
CC
I
CC
= 0 mA
I
out
w*55_C
25_C to 125_C
DI
Additional Quiescent
Supply Current
V = 2.4 V, Any One Input
5.5
2.9
2.4
mA
CC
I
V = V or GND, Other Inputs
I
CC
= 0 mA
l
out
7. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (C = 50 pF; Input t = t = 6.0 ns)
L
r
f
Guaranteed Limit
*55_C to 25_C
v85_C
v125_C
Symbol
Parameter
Test Conditions
Figures
Min
Max
Min
Max
Min
Max Unit
t
t
,
Maximum Propagation
Delay, Input A to Output
Y (L to H)
V
= 5.0 V $10%
CC
1 & 2
32
40
19
48
22
ns
ns
PLH
PHL
C = 50 pF, Input t = t = 6.0 ns
L
r
f
t
t
,
Maximum Output
Transition Time, Any
Output
V
= 5.0 V $10%
1 & 2
15
TLH
THL
CC
C = 50 pF, Input t = t = 6.0 ns
L
r
f
8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, V = 5.0 V
CC
C
PD
Power Dissipation Capacitance, per Inverter (Note 9)
32
pF
2
9. Used to determine the no−load dynamic power consumption: P = C
V
f + I
V
. For load considerations, see the ON
D
PD CC
CC CC
Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
4