Datasheet > 74HC573-Q100

74HC573-Q100

更新时间： 2022-03-30 15:58:25

品牌	Logo	应用领域
恩智浦 - NXP		锁存器
页数	文件大小	规格书
19页	253K
描述
Octal D-type transparent latch; 3-state

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74HC573-Q100 数据手册

74HC573-Q100; 74HCT573-Q100

Octal D-type transparent latch; 3-state

Rev. 2 — 16 August 2012

Product data sheet

1. General description

The 74HC573-Q100; 74HCT573-Q100 is a high-speed Si-gate CMOS device and is pin

compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with

JEDEC standard no. 7A.

The 74HC573-Q100; 74HCT573-Q100 has octal D-type transparent latches featuring

separate D-type inputs for each latch and 3-state true outputs for bus-oriented

applications. A latch enable (LE) input and an output enable (OE) input are common to all

latches.

When LE is HIGH, data at the Dn inputs enter the latches. In this condition, the latches are

transparent, i.e. a latch output changes state each time its corresponding D input

changes.

When LE is LOW the latches store the information that was present at the D-inputs a

set-up time preceding the HIGH-to-LOW transition of LE. When OE is LOW, the contents

of the 8 latches are available at the outputs. When OE is HIGH, the outputs go to the

high-impedance OFF-state. Operation of the OE input does not affect the state of the

latches.

This product has been qualified to the Automotive Electronics Council (AEC) standard

Q100 (Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

 Automotive product qualification in accordance with AEC-Q100 (Grade 1)

 Specified from 40 C to +85 C and from 40 C to +125 C

 Input levels:

 For 74HC573: CMOS level

 For 74HCT573: TTL level

 Inputs and outputs on opposite sides of package allowing easy interface with

microprocessors

 Useful as input or output port for microprocessors and microcomputers

 3-state non-inverting outputs for bus-oriented applications

 Common 3-state output enable input

 Multiple package options

 ESD protection:

 MIL-STD-883, method 3015 exceeds 2000 V

 HBM JESD22-A114F exceeds 2000 V

 MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )

12 3 4 5 6 7...19

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