74HC2G86DC

更新时间： 2024-02-15 18:49:29

品牌	Logo	应用领域
恩智浦 - NXP		逻辑集成电路石英晶振光电二极管
页数	文件大小	规格书
17页	84K
描述
Dual 2-input exclusive-OR gate

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74HC2G86DC 数据手册

Philips Semiconductors

Product speciﬁcation

Dual 2-input exclusive-OR gate

74HC2G86; 74HCT2G86

RECOMMENDED OPERATING CONDITIONS

74HC2G86

74HCT2G86

UNIT

SYMBOL

PARAMETER

supply voltage

CONDITIONS

MIN.

2.0

TYP. MAX. MIN.

TYP. MAX.

V_CC

V_I

5.0

−

6.0

4.5

5.0

5.5

input voltage

V_CC

−

V_CC

V_O

output voltage

−

T_amb

operating ambient

temperature

see DC and AC

characteristics per

device

−40

+25

+125 −40

+25

+125 °C

t_r, t_f

input rise and fall times

V_CC= 2.0 V

V_CC= 4.5 V

−

1000

500

−

6.0

−

6.0

−

500

−

V_CC= 6.0 V

400

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL

PARAMETER

supply voltage

CONDITIONS

MIN. MAX. UNIT

V_CC

I_IK

−0.5

−

+7.0

±20

input diode current

V_I< −0.5 V or V_I> V_CC+ 0.5 V; note 1

V_O< −0.5 V or V_O> V_CC+ 0.5 V; note 1

−0.5 V < V_O< V_CC+ 0.5 V; note 1

note 1

I_OK

I_O

output diode current

output source or sink current

V_CCor GND current

storage temperature

power dissipation

−

I_CC

T_stg

P_D

−

−65

−

+150 °C

300 mW

T_amb= −40 to +125 °C; note 2

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. Above 110 °C the value of P_Dderates linearly with 8 mW/K.

2003 Jul 28

1 2 3 456 7 8...17

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