74HC2G86DC

更新时间： 2024-01-05 21:05:56

品牌	Logo	应用领域
恩智浦 - NXP		逻辑集成电路石英晶振光电二极管
页数	文件大小	规格书
17页	84K
描述
Dual 2-input exclusive-OR gate

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数据手册

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74HC2G86DC 数据手册

Philips Semiconductors

Product speciﬁcation

Dual 2-input exclusive-OR gate

74HC2G86; 74HCT2G86

FEATURES

DESCRIPTION

• Wide supply voltage range from 2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

The 74HC2G/HCT2G86 is a high-speed Si-gate CMOS

device.

The 74HC2G/HCT2G86 provides dual 2-input

exclusive-OR gate.

• Low power dissipation

• Balanced propagation delays

• Very small 8 pins package

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

MM EIA/JESD22-A115-A exceeds 200 V.

QUICK REFERENCE DATA

GND = 0 V; T_amb= 25 °C; t_r= t_f≤ 6.0 ns.

TYPICAL

SYMBOL

PARAMETER

CONDITIONS

UNIT

HC2G86 HCT2G86

t_PHL/t_PLHpropagation delay nA to nY

C_L= 50 pF; V_CC= 4.5 V 11

1.5

C_I

input capacitance

C_PD

power dissipation capacitance per gate notes 1 and 2

Notes

1. C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i× N + ∑ (C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF;

V_CC= supply voltage in Volts;

N = total switching outputs;

∑ (C_L× V_CC²× f_o) = sum of outputs.

2. For 74HC2G86 the condition is V_I= GND to V_CC

For 74HCT2G86 the condition is V_I= GND to V_CC− 1.5 V.

2003 Jul 28

123 4 5 6 7...17

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