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74HC02DTR2G PDF预览

74HC02DTR2G

更新时间: 2024-01-23 20:46:40
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 121K
描述
Quad 2−Input NOR Gate High−Performance Silicon−Gate CMOS

74HC02DTR2G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP,针数:14
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:N系列:HC/UH
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm逻辑集成电路类型:NOR GATE
湿度敏感等级:NOT SPECIFIED功能数量:4
输入次数:2端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260传播延迟(tpd):110 ns
认证状态:COMMERCIAL座面最大高度:1.2 mm
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm
Base Number Matches:1

74HC02DTR2G 数据手册

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74HC02  
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74HC02DTR2G 替代型号

型号 品牌 替代类型 描述 数据表
SN74HC02PW TI

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