Datasheet > 74H1G66_01

74H1G66_01

更新时间： 2024-11-21 03:07:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关
页数	文件大小	规格书
10页	203K
描述
SINGLE BILATERAL SWITCH

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中文翻译

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数据手册

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74H1G66_01 数据手册

74H1G66

SINGLE BILATERAL SWITCH

■

HIGH SPEED: t = 4ns (TYP.) at V = 4.5V

PD CC

LOW POWER DISSIPATION:

= 1µA(MAX.) at T =25°C

■

HIGH NOISE IMMUNITY:

= V = 28% V (MIN.)

NIH

NIL

LOW "ON" RESISTANCE:

= 50Ω (TYP.) AT V = 9V I = 100µA

SOT23-5L

I/O

SINE WAVE DISTORTION:

0.042% AT V = 4V f = 1KHz

WIDE OPERATING RANGE:

ORDER CODES

(OPR) = 2V TO 12V

PACKAGE

T & R

SOT23-5L

74H1G66STR

DESCRIPTION

The 74H1G66 is a CMOS SINGLE BILATERAL

SWITCH fabricated in silicon gate C MOS

technology. It achieves high speed performance

combined with true CMOS low power

consumption.

The C input is provided to control the switch and

it’s compatible with standard CMOS output; the

switch is ON (port I/O is connected to Port O/I)

when the C input is held high and OFF (high

impedance state exists between the two ports)

when C is held low.

All inputs and output are equipped with protection

circuits against static discharge, giving them ESD

immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

July 2001

1/10

12 3 4 5 6 7...10

中文翻译

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