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74H1G66S PDF预览

74H1G66S

更新时间: 2024-11-24 22:22:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 复用器开关复用器或开关信号电路光电二极管
页数 文件大小 规格书
8页 64K
描述
SINGLE BILATERAL SWITCH

74H1G66S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SOT-23, 5 PIN针数:5
Reach Compliance Code:not_compliantHTS代码:8542.39.00.01
风险等级:5.64Is Samacsys:N
模拟集成电路 - 其他类型:SPSTJESD-30 代码:R-PDSO-G5
JESD-609代码:e0长度:2.9 mm
正常位置:NO信道数量:1
功能数量:1端子数量:5
标称断态隔离度:60 dB通态电阻匹配规范:10 Ω
最大通态电阻 (Ron):170 Ω最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/12 V
认证状态:Not Qualified座面最大高度:1.45 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):12 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):4.5 V
表面贴装:YES最长断开时间:20 ns
最长接通时间:23 ns技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.625 mmBase Number Matches:1

74H1G66S 数据手册

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74H1G66  
SINGLE BILATERAL SWITCH  
HIGH SPEED:tPD =4 ns (TYP.) atVCC =5V  
LOW POWER DISSIPATION:  
I
CC =1 µA (MAX.) at TA =25 oC  
HIGH NOISEIMMUNITY:  
VNIH = VNIL =28% VCC (MIN.)  
LOWON” RESISTANCE  
S
(SOT23-5L)  
µ
RON =50 (TYP.)AT VCC=9VII/O=100 A  
SINE WAVE DISTORTION  
ORDER CODES :  
74H1G66S  
0.042%(TYP.) AT VCC=4Vf=1KHz  
WIDE OPERATINGVOLTAGERANGE:  
VCC (OPR)= 2V to 12V  
performance combined with true CMOS low  
power consumption.  
DESCRIPTION  
The C input is provided to control the switch; the  
switch is ON when the C input is held high and off  
when C is held low.  
The 74H1G66 is an high-speed CMOS SINGLE  
BILATERAL SWITCH fabricated in silicon gate  
C2MOS technology. It has high speed  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
1/8  
February 2000  

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