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74FCT16245ATEB PDF预览

74FCT16245ATEB

更新时间: 2024-11-26 12:59:19
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
7页 90K
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74FCT16245ATEB 数据手册

 浏览型号74FCT16245ATEB的Datasheet PDF文件第2页浏览型号74FCT16245ATEB的Datasheet PDF文件第3页浏览型号74FCT16245ATEB的Datasheet PDF文件第4页浏览型号74FCT16245ATEB的Datasheet PDF文件第5页浏览型号74FCT16245ATEB的Datasheet PDF文件第6页浏览型号74FCT16245ATEB的Datasheet PDF文件第7页 
FAST CMOS 16-BIT  
BIDIRECTIONAL  
TRANSCEIVER  
IDT54/74FCT16245T/AT/CT/ET  
DESCRIPTION:  
FEATURES:  
TheFCT16245T16-bittransceiverisbuiltusingadvanceddualmetalCMOS  
technology. These high-speed, low-power transceivers are ideal for  
synchronouscommunicationbetweentwobusses(AandB).TheDirectionand  
OutputEnablecontrolsoperatethesedevicesaseithertwoindependent8-bit  
transceiversorone16-bittransceiver.Thedirectioncontrolpin(xDIR)controls  
thedirectionofdataflow.Theoutputenablepin(xOE)overridesthedirection  
control and disables both ports. All inputs are designed with hysteresis for  
improvednoisemargin.  
• 0.5 MICRON CMOS Technology  
High-speed, low-power CMOS replacement for ABT functions  
Typical tSK(o) (Output Skew) < 250ps  
Low input and output leakage 1µA (max.)  
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using  
machine model (C = 200pF, R = 0)  
High drive outputs (–32mA IOH, 64mA IOL)  
• Power off disable outputs permit “live insertion”  
Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V,  
TA = 25°C  
TheFCT16245Tisideallysuitedfordrivinghigh-capacitanceloadsandlow-  
impedancebackplanes.Theoutputbuffersaredesignedwithpoweroffdisable  
capabilitytoallow"liveinsertion"ofboardswhenusedasbackplanedrivers.  
Available in the following packages:  
Industrial: SSOP, TSSOP  
Military:CERPACK  
FUNCTIONALBLOCKDIAGRAM  
1
DIR  
2 DIR  
1
1
1
1
1
OE  
2
2
2
2
2
OE  
1
A
1
2
2
2
A
1
2
B1  
B2  
B3  
B4  
B1  
B2  
B3  
B4  
1
A
A
1
1
1
1
A
A
A
A
3
4
5
6
2
2
2
2
A3  
A4  
A5  
A6  
1
1
B
5
6
2
2
B
5
6
B
B
1
1
A
7
8
2
2
A
7
8
1
1
B
7
8
2
2
B
7
8
A
A
B
B
IDTandtheIDTlogoareregisteredtrademarkofIntegratedDeviceTechnology,Inc.  
MILITARY AND INDUSTRIAL TEMPERATURE RANGES  
JANUARY 2009  
1
© 2009 Integrated Device Technology, Inc.  
DSC-5456/9  

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