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74AXP1G00 PDF预览

74AXP1G00

更新时间: 2024-12-01 01:06:31
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
17页 794K
描述
Low-power 2-input NAND gate

74AXP1G00 数据手册

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74AXP1G00  
Low-power 2-input NAND gate  
Rev. 1 — 24 September 2014  
Product data sheet  
1. General description  
The 74AXP1G00 is a single 2-input NAND gate.  
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall  
times.  
This device ensures very low static and dynamic power consumption across the entire  
VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications  
using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging  
backflow current through the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 0.7 V to 2.75 V  
Low input capacitance; CI = 0.5 pF (typical)  
Low output capacitance; CO = 1.0 pF (typical)  
Low dynamic power consumption; CPD = 2.5 pF at VCC = 1.2 V (typical)  
Low static power consumption; ICC = 0.6 A (85 C maximum)  
High noise immunity  
Complies with JEDEC standard:  
JESD8-12A.01 (1.1 V to 1.3 V)  
JESD8-11A.01 (1.4 V to 1.6 V)  
JESD8-7A (1.65 V to 1.95 V)  
JESD8-5A.01 (2.3 V to 2.7 V)  
ESD protection:  
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV  
CDM JESD22-C101E exceeds 1000 V  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 2.75 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 C to +85 C  

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