5秒后页面跳转
74AUP1G386GM,132 PDF预览

74AUP1G386GM,132

更新时间: 2024-02-27 19:34:23
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路石英晶振
页数 文件大小 规格书
16页 76K
描述
74AUP1G386 - Low-power 3-input EXCLUSIVE-OR gate SON 6-Pin

74AUP1G386GM,132 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, XSON-6
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.49
系列:AUP/ULP/VJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:1.45 mm
负载电容(CL):30 pF逻辑集成电路类型:XOR GATE
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:22.1 ns
传播延迟(tpd):22.1 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74AUP1G386GM,132 数据手册

 浏览型号74AUP1G386GM,132的Datasheet PDF文件第2页浏览型号74AUP1G386GM,132的Datasheet PDF文件第3页浏览型号74AUP1G386GM,132的Datasheet PDF文件第4页浏览型号74AUP1G386GM,132的Datasheet PDF文件第5页浏览型号74AUP1G386GM,132的Datasheet PDF文件第6页浏览型号74AUP1G386GM,132的Datasheet PDF文件第7页 
74AUP1G386  
Low-power 3-input EXCLUSIVE-OR gate  
Rev. 03 — 2 July 2009  
Product data sheet  
1. General description  
The 74AUP1G386 provides a single 3-input EXCLUSIVE-OR gate.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I Complies with JEDEC standards:  
N JESD8-12 (0.8 V to 1.3 V)  
N JESD8-11 (0.9 V to 1.65 V)  
N JESD8-7 (1.2 V to 1.95 V)  
N JESD8-5 (1.8 V to 2.7 V)  
N JESD8-B (2.7 V to 3.6 V)  
I ESD protection:  
N HBM JESD22-A114E Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD 78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  
 
 

与74AUP1G386GM,132相关器件

型号 品牌 描述 获取价格 数据表
74AUP1G386GM-H NXP Low-power 3-input EXCLUSIVE-OR gate

获取价格

74AUP1G386GN NXP IC AUP/ULP/V SERIES, 3-INPUT XOR GATE, PDSO6, 0.90 X 1 MM, 0.35 MM HEIGHT, SOT-1115, SON-6

获取价格

74AUP1G386GN NEXPERIA Low-power 3-input EXCLUSIVE-OR gateProduction

获取价格

74AUP1G386GS NXP IC AUP/ULP/V SERIES, 3-INPUT XOR GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6, G

获取价格

74AUP1G386GS NEXPERIA Low-power 3-input EXCLUSIVE-OR gateProduction

获取价格

74AUP1G386GW NXP Low-power 3-input EXCLUSIVE-OR gate

获取价格