Datasheet > 74AUP1G09GN

74AUP1G09GN

更新时间： 2023-09-03 20:29:08

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
17页	262K
描述
Low-power 2-input AND gate with open-drainProduction

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74AUP1G09GN 数据手册

74AUP1G09

Low-power 2-input AND gate with open-drain

Rev. 8.1 — 11 July 2023

Product data sheet

1. General description

The 74AUP1G09 is a single 2-input AND gate with open-drain output. Schmitt-trigger action at all

inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low

static and dynamic power consumption across the entire V_CCrange from 0.8 V to 3.6 V. This device

is fully specified for partial power down applications using I_OFF. The I_OFFcircuitry disables the

output, preventing the potentially damaging backflow current through the device when it is powered

down.

2. Features and benefits

•

Wide supply voltage range from 0.8 V to 3.6 V

•

CMOS low power dissipation

High noise immunity

Overvoltage tolerant inputs to 3.6 V

Low static power consumption; I_CC= 0.9 μA (maximum)

Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

Low noise overshoot and undershoot < 10 % of V_CC

I_OFFcircuitry provides partial Power-down mode operation

Complies with JEDEC standards:

•

JESD8-12 (0.8 V to 1.3 V)

JESD8-11 (0.9 V to 1.65 V)

JESD8-7 (1.65 V to 1.95 V)

JESD8-5 (2.3 V to 2.7 V)

JESD8C (2.7 V to 3.6 V)

•

ESD protection:

•

HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

•

Multiple package options

Specified from -40 °C to +85 °C and -40 °C to +125 °C

12 3 4 5 6 7...17

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