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74AUC1G08GV PDF预览

74AUC1G08GV

更新时间: 2024-02-09 23:20:45
品牌 Logo 应用领域
恩智浦 - NXP 栅极逻辑集成电路光电二极管
页数 文件大小 规格书
12页 54K
描述
Single 2-input AND gate

74AUC1G08GV 技术参数

生命周期:Obsolete零件包装代码:SOT-353
包装说明:TSSOP,针数:5
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.62系列:AUC
JESD-30 代码:R-PDSO-G5长度:2 mm
逻辑集成电路类型:AND GATE功能数量:1
输入次数:2端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd):3.3 ns认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.2 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:1.25 mm

74AUC1G08GV 数据手册

 浏览型号74AUC1G08GV的Datasheet PDF文件第2页浏览型号74AUC1G08GV的Datasheet PDF文件第3页浏览型号74AUC1G08GV的Datasheet PDF文件第4页浏览型号74AUC1G08GV的Datasheet PDF文件第6页浏览型号74AUC1G08GV的Datasheet PDF文件第7页浏览型号74AUC1G08GV的Datasheet PDF文件第8页 
Philips Semiconductors  
Preliminary specification  
Single 2-input AND gate  
74AUC1G08  
DC CHARACTERISTICS  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
TEST CONDITIONS  
Tamb (°C)  
SYMBOL  
PARAMETER  
40 to +85  
UNIT  
OTHER  
VCC (V)  
0.8  
MIN.  
VCC  
TYP.(1)  
MAX.  
VIH  
HIGH-level input  
voltage  
V
1.1 to 2.3  
2.3 to 2.7  
0.8  
0.65 × VCC  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA  
1.7  
VIL  
LOW-level input  
voltage  
GND  
1.1 to 2.3  
2.3 to 2.7  
0.35 × VCC  
0.7  
VOH  
HIGH-level output VI = VIH or VIL; IO = 100 µA 0.8 to 2.7  
voltage  
VCC 0.1  
VI = VIH or VIL; IO =700 µA 0.8  
0.55  
VI = VIH or VIL; IO =3 mA  
VI = VIH or VIL; IO = 5 mA  
VI = VIH or VIL; IO = 8 mA  
VI = VIH or VIL; IO = 9 mA  
1.1  
1.5  
1.65  
2.3  
VCC 0.3  
VCC 0.4  
VCC 0.45  
1.8  
VOL  
LOW-level output VI = VIH or VIL; IO = 100 µA 0.8 to 2.7  
voltage  
0.2  
VI = VIH or VIL; IO = 700 µA 0.8  
0.25  
VI = VIH or VIL; IO = 3 mA  
VI = VIH or VIL; IO = 5 mA  
VI = VIH or VIL; IO = 8 mA  
VI = VIH or VIL; IO = 9 mA  
VI = VCC or GND  
1.1  
0.3  
0.4  
0.45  
0.6  
±5  
1.5  
1.65  
2.3  
II  
input leakage  
current  
0 to 2.7  
±0.1  
Ioff  
ICC  
power OFF  
leakage current  
VI or VO = 2.7 V  
0
±0.1  
±10  
µA  
µA  
quiescent supply VI = VCC or GND; IO = 0  
current  
0.8 to 2.7  
0.1  
10  
Note  
1. All typical values are measured at Tamb = 25 °C.  
2002 Nov 12  
5

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