Datasheet > 74AHC1G09GW-Q100H

74AHC1G09GW-Q100H

更新时间： 2024-09-29 19:52:15

品牌	Logo	应用领域
恩智浦 - NXP		光电二极管逻辑集成电路
页数	文件大小	规格书
12页	100K
描述
74AHC1G09-Q100 - 2-input AND gate with open-drain output TSSOP 5-Pin

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74AHC1G09GW-Q100H 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TSSOP	包装说明：	1.25 MM, PLASTIC, MO-203, SC-88A, SOT353-1,TSSOP-5
针数：	5	Reach Compliance Code：	compliant
风险等级：	5.77	Base Number Matches：	1

74AHC1G09GW-Q100H 数据手册

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74AHC1G09-Q100

2-input AND gate with open-drain output

Rev. 2 — 16 August 2012

Product data sheet

1. General description

The 74AHC1G09-Q100 is a high-speed Si-gate CMOS device.

The 74AHC1G09-Q100 provides the 2-input AND function with open-drain output.

The output of the 74AHC1G09-Q100 is an open drain and can be connected to other

open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

functions. For digital operation, this device must have a pull-up resistor to establish a logic

HIGH level.

This product has been qualified to the Automotive Electronics Council (AEC) standard

Q100 (Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

 Automotive product qualification in accordance with AEC-Q100 (Grade 1)

 Specified from 40 C to +85 C and from 40 C to +125 C

 High noise immunity

 Low power dissipation

 SOT353-1 and SOT753 package options

 ESD protection:

 MIL-STD-883, method 3015 exceeds 2000 V

 HBM JESD22-A114F exceeds 2000 V

 MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )

3. Ordering information

Table 1.

Ordering information

Type number

Package

Temperature range Name

Description

Version

74AHC1G09GW-Q100 40 C to +125 C

TSSOP5

plastic thin shrink small outline package; 5 leads;

body width 1.25 mm

SOT353-1

74AHC1G09GV-Q100 40 C to +125 C

SC-74A

plastic surface-mounted package; 5 leads

SOT753

12 3 4 5 6 7...12

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