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74ABT32N PDF预览

74ABT32N

更新时间: 2024-02-23 18:21:27
品牌 Logo 应用领域
恩智浦 - NXP 触发器逻辑集成电路光电二极管
页数 文件大小 规格书
10页 98K
描述
Quad 2-input OR gate

74ABT32N 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP, TSSOP14,.25针数:14
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.24系列:ABT
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm负载电容(CL):50 pF
逻辑集成电路类型:OR GATE最大I(ol):0.02 A
湿度敏感等级:1功能数量:4
输入次数:2端子数量:14
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5 V
最大电源电流(ICC):0.05 mAProp。Delay @ Nom-Sup:3.8 ns
传播延迟(tpd):3.2 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:BICMOS
温度等级:INDUSTRIAL端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:4.4 mmBase Number Matches:1

74ABT32N 数据手册

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Philips Semiconductors  
Product specification  
Quad 2-input OR gate  
74ABT32  
1, 2  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
CONDITIONS  
RATING  
–0.5 to +7.0  
–18  
UNIT  
V
V
CC  
I
IK  
DC supply voltage  
DC input diode current  
V < 0  
I
mA  
V
3
V
I
DC input voltage  
–1.2 to +7.0  
–50  
I
DC output diode current  
V
O
< 0  
mA  
V
OK  
3
V
DC output voltage  
output in Off or High state  
output in Low state  
–0.5 to +5.5  
40  
OUT  
OUT  
I
DC output current  
mA  
°C  
T
stg  
Storage temperature range  
–65 to 150  
NOTES:  
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the  
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability.  
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction  
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.  
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
RECOMMENDED OPERATING CONDITIONS  
LIMITS  
SYMBOL  
PARAMETER  
UNIT  
MIN  
4.5  
0
MAX  
V
CC  
DC supply voltage  
5.5  
V
V
V
I
Input voltage  
V
CC  
V
High-level input voltage  
Low-level input voltage  
High-level output current  
Low-level output current  
Input transition rise or fall rate  
2.0  
V
IH  
V
0.8  
–15  
20  
V
IL  
I
mA  
mA  
ns/V  
°C  
OH  
I
OL  
t/v  
0
10  
T
amb  
Operating free-air temperature range  
–40  
+85  
DC ELECTRICAL CHARACTERISTICS  
LIMITS  
T
= –40°C  
to +85°C  
amb  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
T
amb  
= +25°C  
UNIT  
MIN  
TYP  
MAX  
MIN  
MAX  
V
Input clamp voltage  
V
V
V
V
V
V
V
V
V
= 4.5V; I = –18mA  
–0.9  
2.9  
–1.2  
–1.2  
V
V
IK  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
IK  
V
OH  
High-level output voltage  
Low-level output voltage  
Input leakage current  
= 4.5V; I = –15mA; V = V or V  
2.5  
2.5  
OH  
I
IL  
IH  
V
OL  
= 4.5V; I = 20mA; V = V or V  
IH  
0.35  
±0.01  
±5.0  
5.0  
0.5  
±1.0  
±100  
50  
0.5  
±1.0  
±100  
50  
V
OL  
I
IL  
I
= 5.5V; V = GND or 5.5V  
µA  
µA  
µA  
mA  
µA  
I
I
I
Power-off leakage current  
Output High leakage current  
= 0.0V; V or V 4.5V  
O I  
OFF  
CEX  
I
= 5.5V; V = 5.5V; V = GND or V  
O I CC  
1
I
O
Output current  
= 5.5V; V = 2.5V  
–50  
–75  
2
–180  
50  
–50  
–180  
50  
O
I
Quiescent supply current  
= 5.5V; V = GND or V  
I CC  
CC  
Additional supply current per  
= 5.5V; One data input at 3.4V, other  
I  
CC  
0.25  
500  
500  
µA  
2
input pin  
inputs at V or GND  
CC  
NOTES:  
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.  
2. This is the increase in supply current for each input at 3.4V.  
3. For valid test results, data must not be loaded into the flip-flop or latch after applying the power.  
3
1995 Sep 22  

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