Datasheet > 71V256SA15YPZGI8

71V256SA15YPZGI8

更新时间： 2024-02-25 20:47:57

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
8页	592K
描述
Lower Power 3.3V CMOS Fast SRAM

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71V256SA15YPZGI8 数据手册

Lower Power

IDT71V256SA

3.3V CMOS Fast SRAM

256K (32K x 8-Bit)

Features

Description

◆

Ideal for high-performance processor secondary cache

Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)

temperature range options

The IDT71V256SA is a 262,144-bit high-speed static RAM orga-

nizedas32Kx8.Itisfabricatedusingahigh-performance,high-reliability

CMOStechnology.

◆

Fast access times:

TheIDT71V256SAhasoutstandinglowpowercharacteristicswhile

at the same time maintaining very high performance. Address access

times of as fast as 12ns are ideal for 3.3V secondary cache in 3.3V

desktopdesigns.

– CommercialandIndustrial:12/15/20ns

Low standby current (maximum):

– 2mAfullstandby

Small packages for space-efficient layouts:

– 28-pin 300 mil SOJ

When power management logic puts the IDT71V256SA in standby

mode,itsverylowpowercharacteristicscontributetoextendedbatterylife.

BytakingCSHIGH,theSRAMwillautomaticallygotoalowpowerstandby

modeandwillremaininstandbyaslongasCSremainsHIGH. Further-

more,underfullstandbymode(CSatCMOSlevel,f=0),powerconsump-

tionisguaranteedtoalwaysbelessthan6.6mWandtypicallywillbemuch

smaller.

– 28-pin TSOP Type I

◆

Produced with advanced high-performance CMOS

technology

◆

Inputs and outputs are LVTTL-compatible

Single 3.3V(±0.3V) power supply

Green parts available, see ordering information

TheIDT71V256SAispackagedina28-pin300milSOJanda28-pin

300 mil TSOP Type I.

FunctionalBlockDiagram

VCC

GND

262,144 BIT

MEMORY ARRAY

ADDRESS

DECODER

A14

I/O

I/O CONTROL

INPUT

DATA

CIRCUIT

I/O7

CONTROL

CIRCUIT

3101 drw 01

AUGUST 2015

DSC-3101/11

12 3 4 5 6 7 8

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