5秒后页面跳转
7164S20YGI PDF预览

7164S20YGI

更新时间: 2024-11-16 00:21:43
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 749K
描述
CMOS Static RAM 64K

7164S20YGI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOJ
包装说明:SOJ, SOJ28,.34针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:1.31
Samacsys Description:SOIC 300 MIL- J BEND最长访问时间:19 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J28
JESD-609代码:e3长度:17.9324 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ28,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.015 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.17 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.5184 mmBase Number Matches:1

7164S20YGI 数据手册

 浏览型号7164S20YGI的Datasheet PDF文件第2页浏览型号7164S20YGI的Datasheet PDF文件第3页浏览型号7164S20YGI的Datasheet PDF文件第4页浏览型号7164S20YGI的Datasheet PDF文件第5页浏览型号7164S20YGI的Datasheet PDF文件第6页浏览型号7164S20YGI的Datasheet PDF文件第7页 
             
             
             
             
             
             
             
             
             
             
             
             
             
             
             
             
             
             
CMOS Static RAM  
64K (8K x 8-Bit)  
IDT7164S  
IDT7164L  
Features  
Description  
High-speed address/chip select access time  
TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8K  
x8.Itisfabricatedusinghigh-performance,high-reliabilityCMOStech-  
nology.  
– Military:20/25/35/45/55/70/85/100ns(max.)  
– Industrial:20/25ns(max.)  
– Commercial: 20/25ns (max.)  
Low power consumption  
Battery backup operation – 2V data retention voltage  
(L Version only)  
Produced with advanced CMOS high-performance  
technology  
Inputs and outputs directly TTL-compatible  
Three-state outputs  
Addressaccesstimesasfastas20nsareavailableandthecircuitoffers  
a reduced power standby mode. When CS1 goes HIGH or CS2 goes  
LOW,thecircuitwillautomaticallygoto,andremainin,alow-powerstand-  
by mode. The low-power (L) version also offers a battery backup data  
retention capability at power supply levels as low as 2V.  
All inputs and outputs of the IDT7164 are TTL-compatible and  
operation is from a single 5V supply, simplifying system designs. Fully  
static asynchronous circuitry is used, requiring no clocks or refreshing  
for operation.  
Available in 28-pin DIP, CERDIP and SOJ  
Military product compliant to MIL-STD-883, Class B  
Green parts available, see ordering information  
TheIDT7164ispackagedina28-pin300milCERDIP,a28-pin600  
mil CERDIP, 300mil Plastic DIP and 300mil SOJ  
Militarygradeproductismanufacturedincompliancewith MIL-STD-  
883,ClassB,makingitideallysuitedtomilitarytemperatureapplications  
demandingthehighestlevelofperformanceandreliability.  
Functional Block Diagram  
A
0
VCC  
GND  
65,536 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A
12  
7
0
I/O  
0
I/O CONTROL  
7
I/O  
CS  
CS  
OE  
WE  
1
2
CONTROL  
LOGIC  
2967 drw 01  
DECEMBER 2016  
1
©2016 Integrated Device Technology, Inc.  
DSC-2967/17  

7164S20YGI 替代型号

型号 品牌 替代类型 描述 数据表
7164S20YG8 IDT

完全替代

CMOS Static RAM 64K
7164L20YGI8 IDT

完全替代

CMOS Static RAM 64K
7164L20YG8 IDT

完全替代

CMOS Static RAM 64K

与7164S20YGI相关器件

型号 品牌 获取价格 描述 数据表
7164S20YGI8 IDT

获取价格

CMOS Static RAM 64K
7164S25D IDT

获取价格

Standard SRAM, 8KX8, 25ns, CMOS, CDIP28
7164S25DG8 IDT

获取价格

CMOS Static RAM 64K
7164S25DG88 IDT

获取价格

CMOS Static RAM 64K
7164S25DGI IDT

获取价格

CMOS Static RAM 64K
7164S25DGI8 IDT

获取价格

CMOS Static RAM 64K
7164S25PE IDT

获取价格

Standard SRAM, 8KX8, 25ns, CMOS, PDSO28, 0.330 INCH, SOIC-28
7164S25TDG8 IDT

获取价格

CMOS Static RAM 64K
7164S25TDG88 IDT

获取价格

CMOS Static RAM 64K
7164S25TDGI IDT

获取价格

CMOS Static RAM 64K