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71342LA55JG8 PDF预览

71342LA55JG8

更新时间: 2024-11-08 00:22:55
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
14页 318K
描述
HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM

71342LA55JG8 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:QCCN, LDCC52,.8SQReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.72最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:S-PQCC-N52
内存密度:32768 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:8功能数量:1
端口数量:2端子数量:52
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCN封装等效代码:LDCC52,.8SQ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最大待机电流:0.0015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.2 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD

71342LA55JG8 数据手册

 浏览型号71342LA55JG8的Datasheet PDF文件第2页浏览型号71342LA55JG8的Datasheet PDF文件第3页浏览型号71342LA55JG8的Datasheet PDF文件第4页浏览型号71342LA55JG8的Datasheet PDF文件第5页浏览型号71342LA55JG8的Datasheet PDF文件第6页浏览型号71342LA55JG8的Datasheet PDF文件第7页 
HIGH SPEED  
IDT71342SA/LA  
4K X 8 DUAL-PORT  
STATIC RAM  
WITH SEMAPHORE  
Features  
High-speed access  
Fully asynchronous operation from either port  
Full on-chip hardware support of semaphore signalling be-  
tween ports  
Battery backup operation—2V data retention (LA only)  
TTL-compatible; single 5V (±10%) power supply  
Available in plastic packages  
– Commercial:20/25/35/45/55/70ns(max.)  
– Industrial: 25ns (max.)  
Low-power operation  
– IDT71342SA  
Active: 700mW (typ.)  
Standby: 5mW (typ.)  
– IDT71342LA  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Active: 700mW (typ.)  
Standby: 1mW (typ.)  
FunctionalBlockDiagram  
R/WR  
R/W  
L
CER  
CEL  
OER  
OEL  
I/O  
CONTROL  
I/O  
CONTROL  
I/O0R - I/O7R  
I/O0L- I/O7L  
MEMORY  
ARRAY  
SEMAPHORE  
LOGIC  
SEMR  
SEM  
L
ADDRESS  
DECODER  
ADDRESS  
DECODER  
A0R- A11R  
A0L- A11L  
2721 drw 01  
SEPTEMBER 2012  
1
DSC 2621/14  
©2012 IntegratedDeviceTechnology,Inc.  

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