Datasheet > 70V7599S200BFGI8

70V7599S200BFGI8

更新时间： 2022-12-29 21:43:09

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
22页	755K
描述
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM

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70V7599S200BFGI8 数据手册

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IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

Capacitance⁽¹⁾

(TA = +25°C, F = 1.0MHZ) PQFP ONLY

Symbol

Parameter

Input Capacitance

Output Capacitance

Conditions⁽²⁾

IN = 3dV

OUT = 3dV

Max. Unit

CIN

(3)

OUT

10.5

5626 tbl 07

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

3. COUT also references CI/O.

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)

70V7599S

Symbol

|I^LI

|I^LO

Parameter

Input Leakage Current⁽¹⁾

Output Leakage Current⁽¹⁾

Test Conditions

DDQ = Max., VIN = 0V to VDDQ

CE = VIH or CE = VIL, VOUT = 0V to VDDQ

OL = +4mA, VDDQ = Min.

OH = -4mA, VDDQ = Min.

OL = +2mA, VDDQ = Min.

OH = -2mA, VDDQ = Min.

Min.

Max.

Unit

µA

___

OL (3.3V) Output Low Voltage⁽²⁾

OH (3.3V) Output High Voltage⁽²⁾

OL (2.5V) Output Low Voltage⁽²⁾

OH (2.5V) Output High Voltage⁽²⁾

0.4

___

2.4

___

0.4

___

2.0

5626 tbl 08

NOTES:

1. At VDD < 2.0V leakages are undefined.

2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.

6.42

1...5 6 789 10 11...22

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