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70T633S12DDI8 PDF预览

70T633S12DDI8

更新时间: 2024-02-22 20:30:47
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
27页 227K
描述
Multi-Port SRAM, 512KX18, 12ns, CMOS, PQFP144

70T633S12DDI8 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.92
最长访问时间:12 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G144JESD-609代码:e0
内存密度:9437184 bit内存集成电路类型:MULTI-PORT SRAM
内存宽度:18湿度敏感等级:4
端口数量:2端子数量:144
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装等效代码:QFP144,.87SQ,20
封装形状:SQUARE封装形式:FLATPACK
并行/串行:PARALLEL电源:2.5,2.5/3.3 V
认证状态:Not Qualified最大待机电流:0.02 A
最小待机电流:2.4 V子类别:SRAMs
最大压摆率:0.395 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
Base Number Matches:1

70T633S12DDI8 数据手册

 浏览型号70T633S12DDI8的Datasheet PDF文件第6页浏览型号70T633S12DDI8的Datasheet PDF文件第7页浏览型号70T633S12DDI8的Datasheet PDF文件第8页浏览型号70T633S12DDI8的Datasheet PDF文件第10页浏览型号70T633S12DDI8的Datasheet PDF文件第11页浏览型号70T633S12DDI8的Datasheet PDF文件第12页 
IDT70T633/1S  
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV)  
70T633/1S  
Symbol  
|ILI  
Parameter  
Test Conditions  
DDQ = Max., VIN = 0V to VDDQ  
DD = Max. IN = 0V to VDD  
CE = VIH or CE = VIL, VOUT = 0V to VDDQ  
OL = +4mA, VDDQ = Min.  
OH = -4mA, VDDQ = Min.  
OL = +2mA, VDDQ = Min.  
OH = -2mA, VDDQ = Min.  
Min.  
Max.  
10  
Unit  
µA  
µA  
µA  
V
(1)  
___  
___  
___  
___  
|
Input Leakage Current  
V
|ILI|  
JTAG & ZZ Input Leakage Current(1,2)  
Output Leakage Current(1,3)  
V
,
V
+30  
10  
|ILO  
|
0
1
V
OL (3.3V) Output Low Voltage(1)  
OH (3.3V) Output High Voltage(1)  
OL (2.5V) Output Low Voltage(1)  
OH (2.5V) Output High Voltage(1)  
NOTES:  
I
0.4  
___  
V
I
2.4  
V
___  
V
I
0.4  
V
___  
V
I
2.0  
V
5670 tbl 09  
1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to page 6 for details.  
2. Applicable only for TMS, TDI and TRST inputs.  
3. Outputs tested in tri-state mode.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(VDD = 2.5V ± 100mV)  
70T633/1S8(6)  
Com'l Only  
70T633/1S10  
Com'l  
70T633/1S12  
Com'l  
70T633/1S15  
Com'l Only  
& Ind(6)  
& Ind  
Symbol  
Parameter  
Test Condition  
= VIL  
Version  
COM'L  
Typ.(4)  
Max.  
Typ.(4)  
Max.  
405  
445  
120  
145  
265  
290  
10  
Typ.(4)  
300  
300  
75  
Max.  
355  
395  
105  
130  
230  
255  
10  
Typ.(4)  
Max. Unit  
IDD  
Dynamic Operating  
Current (Both  
Ports Active)  
mA  
305  
CE  
L
and CE  
R
,
S
S
S
S
S
S
S
S
S
S
S
S
350  
475  
300  
300  
90  
90  
200  
200  
2
225  
Outputs Disabled  
____  
____  
____  
____  
(1)  
IND  
f = fMAX  
(6)  
ISB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
mA  
mA  
mA  
mA  
CEL  
= CE  
R
= VIH  
COM'L  
IND  
115  
140  
60  
85  
(1)  
f = fMAX  
____  
____  
____  
____  
75  
(6)  
(5)  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
CE"A" = VIL and CE"B" = VIH  
Active Port Outputs Disabled,  
COM'L  
IND  
240  
315  
180  
180  
2
150  
200  
____  
____  
____  
____  
(1)  
f = fMAX  
ISB3  
Full Standby Current Both Ports CE  
> VDD - 0.2V, VIN > VDD - 0.2V  
or VIN < 0.2V, f = 0(2)  
L and  
COM'L  
IND  
2
10  
2
10  
(Both Ports - CMOS CE  
R
____  
____  
____  
____  
2
20  
2
20  
Level Inputs)  
(6)  
(5)  
ISB4  
Full Standby Current  
(One Port - CMOS  
Level Inputs)  
CE"A" < 0.2V and CE"B" > VDD - 0.2V  
IN > VDD - 0.2V or VIN < 0.2V, Active  
Port, Outputs Disabled, f = fMAX  
COM'L  
IND  
240  
315  
200  
200  
2
265  
290  
10  
180  
180  
2
230  
255  
10  
150  
200  
V
____  
____  
____  
____  
(1)  
IZZ  
Sleep Mode Current ZZL = ZZR =  
(Both Ports - TTL  
Level Inputs)  
VIH  
mA  
COM'L  
IND  
2
10  
2
10  
(1)  
f = fMAX  
____  
____  
____  
____  
2
20  
2
20  
5670 tbl 10  
NOTES:  
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, using "AC TEST CONDITIONS".  
2. f = 0 means no address or control lines change. Applies only to input at CMOS level standby.  
3. VDD = 2.5V, TA = 25°C for Typ. values, and are not production tested. IDD DC(f=0) = 100mA (Typ).  
4. CEX = VIL means CE0X = VIL and CE1X = VIH  
CEX = VIH means CE0X = VIH or CE1X = VIL  
CEX < 0.2V means CE0X < 0.2V and CE1X > VDDQX - 0.2V  
CEX > VDDQX - 0.2V means CE0X > VDDQX - 0.2V or CE1X - 0.2V  
"X" represents "L" for left port or "R" for right port.  
5. ISB1, ISB2 and ISB4 will all reach full standby levels (ISB3) on the appropriate port(s) if ZZL and /or ZZR = VIH.  
6. 8ns Commercial and 10ns Industrial speed grades are available in BF-208 and BC-256 packages only.  
9

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