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70P3307S166RM PDF预览

70P3307S166RM

更新时间: 2024-11-09 19:03:35
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
20页 617K
描述
FCBGA-576, Tray

70P3307S166RM 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:FCBGA
针数:576Reach Compliance Code:not_compliant
风险等级:5.84JESD-609代码:e1
内存集成电路类型:QDR SRAM湿度敏感等级:4
峰值回流温度(摄氏度):245端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

70P3307S166RM 数据手册

 浏览型号70P3307S166RM的Datasheet PDF文件第2页浏览型号70P3307S166RM的Datasheet PDF文件第3页浏览型号70P3307S166RM的Datasheet PDF文件第4页浏览型号70P3307S166RM的Datasheet PDF文件第5页浏览型号70P3307S166RM的Datasheet PDF文件第6页浏览型号70P3307S166RM的Datasheet PDF文件第7页 
PRELIMINARY DATASHEET  
IDT70P3307  
1024K/512K x18  
SYNCHRONOUS  
DUAL QDR-II  
TM  
IDT70P3337  
®
Features  
– Four word transfers per clock cycle per port (four word bursts  
on 2 ports)  
18Mb Density (1024K x 18)  
Port Enable pins (E0,E1) for depth expansion  
Dual Echo Clock Output with DLL-based phase alignment  
High Speed Transceiver Logic inputs that can be scaled to  
receive signals from 1.4V to 1.9V  
Also available 9Mb Density (512K x 18)  
QDR-II x 18 Burst-of-2 Interface  
– Commercial: 233MHz, 250MHz  
Separate, Independent Read and Write Data Ports  
– Supports concurrent transactions  
Scalable output drivers  
Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V  
– Output impedance adjustable from 35 ohms to 70 ohms  
1.8V Core Voltage (VDD)  
Dual Echo Clock Output  
Two-Word Burst on all DPRAM accesses  
DDR (Double Data Rate) Multiplexed Address Bus  
– One Read and One Write request per clock cycle  
DDR (Double Data Rate) Data Buses  
– Four word burst data (Two Read and Two Write) per clock on  
each port  
576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch)  
JTAG Interface - IEEE 1149.1 Compliant  
Functional Block Diagram  
VREFL  
VREFR  
E
P[1:0]  
ER[1:0]  
EL[1:0]  
LEFT PORT  
DATA  
RIGHT PORT  
DATA  
REGISTER  
AND LOGIC  
REGISTER  
AND LOGIC  
D
0L- D17L  
D
0R-  
D17R  
WRITE DRIVER  
KR  
KL  
K
L
K
L
KR  
K
R
(1)  
(1)  
ZQ  
L
ZQ  
R
Q
0L-  
Q
17L  
Q
0R- Q17R  
1024/512K x 18  
MEMORY  
ARRAY  
CQL, CQL  
CQR, CQR  
K
C
L
KR  
CR  
L
(2)  
A
18R  
(2)  
A
R
W
0R-  
A0L-  
A
18L  
C
R
, C  
R
R
C
L
, C  
L
L
R
OR K  
R
, K  
OR K  
L
, K  
R
L
L
LEFT PORT  
ADDRESS  
REGISTER  
AND LOGIC  
RIGHT PORT  
ADDRESS  
REGISTER  
AND LOGIC  
R
W
ADDRESS DECODE  
BW0R- BW1R  
BW0L- BW1L  
KR  
KL  
K
R
K
L
TCK  
TMS  
TRST  
TDI  
6725 drw01  
JTAG  
VREFR  
VREFL  
TDO  
NOTES:  
1. Input pin to adjust the device outputs to the system data bus impedance.  
2. Address A18 is a INC for IDT70P3337. Disabled input pin (Diode tied to VDD and VSS).  
January 29, 2009  
©2008 Integrated Device Technology, Inc. All rights reserved. Advanced Datasheet for informational purposes only. Product specifications subject to change without notice. NOT AN OFFER FOR SALE The information  
presented herein is subject to a Non-Disclosure Agreement (NDA) and is for planning purposes only. Nothing contained in this presentation, whether verbal or written, is intended as, or shall have the effect of, a sale  
or an o
f
f
e
r
f
or sale that creates a contractual po
w
e
r of acceptance.
"
QDR
S
R
A
Ms
a
nd Quad
D
a
ta Rate R
A
Ms
c
ompri
s
e a new
f
a
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T
,
a
nd
M
i
cron
T
e
cnolog
y
, I
n
c."  
DSC-6725/1  

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