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70P244L40BYGI8 PDF预览

70P244L40BYGI8

更新时间: 2024-01-28 03:43:18
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
14页 116K
描述
Dual-Port SRAM, 4KX16, 40ns, CMOS, PBGA81, 0.50 MM PITCH, GREEN, BGA-81

70P244L40BYGI8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:0.50 MM PITCH, GREEN, BGA-81针数:81
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.82
最长访问时间:40 nsJESD-30 代码:S-PBGA-B81
JESD-609代码:e1内存密度:65536 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:81字数:4096 words
字数代码:4000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX16封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

70P244L40BYGI8 数据手册

 浏览型号70P244L40BYGI8的Datasheet PDF文件第7页浏览型号70P244L40BYGI8的Datasheet PDF文件第8页浏览型号70P244L40BYGI8的Datasheet PDF文件第9页浏览型号70P244L40BYGI8的Datasheet PDF文件第11页浏览型号70P244L40BYGI8的Datasheet PDF文件第12页浏览型号70P244L40BYGI8的Datasheet PDF文件第13页 
IDT70P264/254/244L  
Datasheet  
Low Power 1.8V 16K/8K/4K x 16 Dual-Port Static RAM  
Industrial Temperature Range  
AC Electrical Characteristics Over the  
Operating TemperatureandSupplyVoltage(3)  
70P264/254/244  
Ind'l Only  
40ns  
55ns  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
WRITE CYCLE  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
EW  
AW  
AS  
WP  
WR  
DW  
DH  
WZ  
OW  
Write Cycle Time  
40  
30  
30  
0
55  
45  
45  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Chip Enable to End-of-Write(2)  
Address Valid to End-of-Write  
Address Set-up Time(2)  
Write Pulse Width  
t
t
t
25  
0
40  
0
t
Write Recovery Time  
Data Valid to End-of-Write  
Data Hold Time(3)  
t
20  
30  
t
0
0
(1)  
____  
____  
t
Write Enable to Output in High-Z  
Output Active from End-of-Write(1,3)  
15  
25  
____  
____  
t
0
0
ns  
7148 tbl 12  
NOTES:  
1. This parameter is guaranteed by device characterization, but is not production tested.  
2. To access SRAM, CE = VIL, UB or LB = VIL.  
3. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over  
voltage and temperature, the actual tDH will always be smaller than the actual tOW.  
6.42  
10  

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