IDT7025S/L
High-Speed 8K x 16 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Data Retention Characteristics Over All Temperature Ranges
(L Version Only)
Symbol
Parameter
Test Condition
Min.
Typ.(1)
Max.
Unit
V
___
___
V
DR
V
CC for Data Retention
V
CC = 2V
2.0
___
ICCDR
Data Retention Current
µA
CE > VHC
IN > VHC or < VLC
MIL. & IND.
COM'L.
100
4000
___
V
100
1500
(3)
___
___
t
CDR
Chip Deselect to Data Retention Time
Operation Recovery Time
0
ns
SEM > VHC
(3)
(2)
___
___
tR
t
RC
ns
2683 tbl 10
NOTES:
1. TA = +25°C, VCC = 2V, and are not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed by device characterization, but is not production tested.
4. At Vcc < 2.0V input leakages are undefined.
Data Retention Waveform
DATA RETENTION MODE
VDR
≥
4.5V
4.5V
VCC
2V
tCDR
tR
VDR
VIH
VIH
CE
2683 drw 05
AC Test Conditions
Input Pulse Levels
GND to 3.0V
5ns Max.
1.5V
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
1.5V
Figures 1 and 2
2683 tbl 11
5V
5V
893Ω
893Ω
DATAOUT
BUSY
INT
DATAOUT
30pF
347Ω
5pF*
347Ω
2683 drw 06
Figure 2. Output Test Load
(for tLZ, tHZ, tWZ, tOW)
* including scope and jig.
Figure 1. AC Output Test Load
6.482