是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | QFP, QFP64,.6SQ,32 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.23 |
最长访问时间: | 20 ns | I/O 类型: | COMMON |
JESD-30 代码: | S-PQFP-G64 | JESD-609代码: | e3 |
内存密度: | 131072 bit | 内存集成电路类型: | APPLICATION SPECIFIC SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 64 | 字数: | 16384 words |
字数代码: | 16000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 16KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QFP |
封装等效代码: | QFP64,.6SQ,32 | 封装形状: | SQUARE |
封装形式: | FLATPACK | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 电源: | 5 V |
认证状态: | Not Qualified | 最大待机电流: | 0.03 A |
最小待机电流: | 4.5 V | 子类别: | SRAMs |
最大压摆率: | 0.37 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
7006S25FG | IDT |
获取价格 |
Dual-Port SRAM, 16KX8, 25ns, CMOS, PQCC68, 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, GREEN, Q | |
7006S25FGB8 | IDT |
获取价格 |
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM | |
7006S25FGI8 | IDT |
获取价格 |
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM | |
7006S25GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, GREEN, C | |
7006S25GGB8 | IDT |
获取价格 |
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM | |
7006S25GGI8 | IDT |
获取价格 |
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM | |
7006S25GI | IDT |
获取价格 |
Dual-Port SRAM, 16KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, | |
7006S25JB | IDT |
获取价格 |
Dual-Port SRAM, 16KX8, 25ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, | |
7006S25JG | IDT |
获取价格 |
Dual-Port SRAM, 16KX8, 25ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, P | |
7006S25JG8 | IDT |
获取价格 |
Dual-Port SRAM, 16KX8, 25ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, GREEN, P |