Datasheet > 6R3R18W105MV4E

6R3R18W105MV4E

更新时间： 2024-11-11 06:31:07

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描述
Tanceram® Chip Capacitors

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6R3R18W105MV4E 数据手册

Ta n c e r a m

ch i p

ca pa c i T o r s

TANCERAM^®chip capacitors can replace tantalum capacitors

in many applications and offer several key advantages over

traditional tantalums. Because Tanceram^®capacitors exhibit

extremely low ESR, equivalent circuit performance can often

be achieved using considerably lower capacitance values.

Low DC leakage reduces current drain, extending the battery

life of portable products. Tancerams^®high DC breakdown

voltage ratings offer improved reliability and eliminate large

voltage de-rating common when designing with tantalums.

Ad v A N tA g e s

• Low ESR

• Low DC Leakage

• Higher Surge Voltage

• Reduced CHIP Size

• Higher Insulation Resistance

• Non-polarized Devices

• Improved Reliability

• Higher Ripple Current

Ap p l i C At i o N s

• Switching Power Supply Smoothing (Input/Output)

• Backlighting Inverters

• DC/DC Converter Smoothing (Input/Output)

• General Digital Circuits

Typical ESR Comparison

Typical Breakdown Voltage Comparison

100%

75%

50%

25%

1.0 µF / 16V

Tantalum

1.0 µF / 16V Tantalum

1.0 µF / 16V TANCERAM ^

0.1

0.01

0.001

100

200

300

400

500

0.01

0.1

100

DC Breakdown Voltage

Frequency (MHz)

Ho w t o

r d e r tANCerAM^®

250

R18

105

CASE SIZE

TERMINATION

V = Ni barrier w/

100% Sn Plating

VOLTAGE

DIELECTRIC

CAPACITANCE

TOLERANCE

Y5V

= +80% -20%

X7R/X5R

TAPE MODIFIER

500

50 V

W = X7R

X = X5R

Y = Y5V

1st two digits are

significant; third digit

denotes number of

zeros.

Code

Type Reel

Plastic 7”

See Chart

250

160

100

25 V

16 V

10 V

Paper

7”

MARKING

4 = Unmarked

Tape specifications

conform to EIA RS481

6R3 = 6.3 V

10%

20%

474 = 0.47 µF

105 = 1.00 µF

P/N written: 250R18Y105ZV4E

www.johansondielectrics.com

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