是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | MODULE | 包装说明: | FLANGE MOUNT, R-XUFM-X13 |
针数: | 28 | Reach Compliance Code: | unknown |
风险等级: | 5.73 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 600 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X13 | 元件数量: | 6 |
端子数量: | 13 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 530 ns |
标称接通时间 (ton): | 390 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
6MBI50VW-120-50 | FUJI |
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IGBT MODULE | |
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6MBI75-060 | FUJI |
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES | |
6MBI75F-060 | FUJI |
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IGBT(600V 75A) | |
6MBI75FA060 | ETC |
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TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) | |
6MBI75FA-060 | ETC |
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||
6MBI75J060 | ETC |
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TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) | |
6MBI75L060 | ETC |
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TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) | |
6MBI75L-060 | FUJI |
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IGBT(600V/75A) | |
6MBI75PC-120 | FUJI |
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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel |