生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
Is Samacsys: | N | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 600 V | 门极-发射极最大电压: | 6 V |
元件数量: | 6 | 最大功率耗散 (Abs): | 300 W |
子类别: | Insulated Gate BIP Transistors | VCEsat-Max: | 5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
6MBI75F-060 | FUJI |
获取价格 |
IGBT(600V 75A) | |
6MBI75FA060 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) | |
6MBI75FA-060 | ETC |
获取价格 |
||
6MBI75J060 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) | |
6MBI75L060 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) | |
6MBI75L-060 | FUJI |
获取价格 |
IGBT(600V/75A) | |
6MBI75PC-120 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel | |
6MBI75S-060 | FUJI |
获取价格 |
IGBT Module | |
6MBI75S-120 | FUJI |
获取价格 |
IGBT(1200V/75A) | |
6MBI75S-120_10 | FUJI |
获取价格 |
IGBT MODULE |